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1MBI3600VD-120P डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - IGBT MODULE - Fuji

भाग संख्या 1MBI3600VD-120P
समारोह IGBT MODULE
मैन्युफैक्चरर्स Fuji 
लोगो Fuji लोगो 
पूर्व दर्शन
1 Page
		
<?=1MBI3600VD-120P?> डेटा पत्रक पीडीएफ

1MBI3600VD-120P pdf
1MBI3600VD-120P
IGBT Modules
http://www.fujielectric.com/products/semiconductor/
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Items
Zero gate voltage collector current
Gate-Emitter leakage current
Gate-Emitter threshold voltage
Collector-Emitter saturation voltage
Internal gate resistance
Input capacitance
Turn-on
Turn-off
Forward on voltage
Reverse recovery time
Lead resistance, terminal-chip
Thermal resistance characteristics
Symbols
Conditions
ICES VGE = 0V, VCE = 1200V
IGES VCE = 0V, VGE=±20V
VGE (th)
VCE = 20V, Ic = 3600mA
VCE (sat)
(main terminal) VGE=15V
Ic = 3600A
VCE (sat)
(chip)
Tj=25°C
Tj=125°C
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
Int Rg
Cies VCE=10V,VGE=0V,f=1MHz
ton VCC = 600V, Ic = 3600A
tr Lm = 46nH, VGE=±15V ,Tj=125°C
toff Rgon = 1.2 Ω
tf Rgoff = 0.22 Ω
VF
(main terminal)
Tj=25°C
Tj=125°C
VF
(chip)
VGE= 0V
IF = 3600A
Tj=150°C
Tj=25°C
Tj=125°C
Tj=150°C
trr IF = 3600A,Tj=125°C
R lead
Items
Symbols Conditions
Thermal resistance
Contact Thermal resistance
Rth(j-c)
Rth(c-f)
IGBT
FWD
with Thermal Compound(*)
* This is the value which is defined mounting on the additional cooling fin with thermal compound.
Characteristics
min. typ. max.
- - 1.0
- - 4800
6.0 6.5 7.0
- 2.02 2.31
- 2.32 -
- 2.42 -
- 1.70 1.95
- 2.00 -
- 2.10 -
- 0.63 -
- 312 -
- 2.98 -
- 0.88 -
- 2.15 -
- 0.27 -
- 2.02 2.31
- 2.17 -
- 2.12 -
- 1.70 1.95
- 1.85 -
- 1.80 -
- 0.46 -
- 0.089 -
Units
mA
nA
V
V
Ω
nF
µs
V
µs
Characteristics
min. typ. max.
- - 0.0073
- - 0.0122
- 0.0040 -
Units
°C/W
2

विन्यास 7 पेज
डाउनलोड[ 1MBI3600VD-120P Datasheet.PDF ]


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