EN25S16B-2S डेटा पत्रक PDF( Datasheet डाउनलोड )

डेटा पत्रक - 16 Megabit 1.8V Serial Flash Memory - EON

भाग संख्या EN25S16B-2S
समारोह 16 Megabit 1.8V Serial Flash Memory
मैन्युफैक्चरर्स EON 
लोगो EON लोगो 
पूर्व दर्शन
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EN25S16B-2S pdf
EN25S16B (2S)
The EN25S16B(2S) is a 16 Megabit (2,048K-byte) Serial Flash memory, with advanced write protection
mechanisms. The EN25S16B(2S) supports the single bit and four bits serial input and output
commands via standard Serial Peripheral Interface (SPI) pins: Serial Clock, Chip Select, Serial DQ0 (DI)
and DQ1(DO), DQ2(WP#) and DQ3(HOLD#). The memory can be programmed 1 to 256 bytes at a time,
using the Page Program instruction.
The EN25S16B(2S) also offers a sophisticated method for protecting individual blocks against
erroneous or malicious program and erase operations. By providing the ability to individually protect and
unprotect blocks, a system can unprotect a specific block to modify its contents while keeping the
remaining blocks of the memory array securely protected. This is useful in applications where program
code is patched or updated on a subroutine or module basis or in applications where data storage
segments need to be modified without running the risk of errant modifications to the program code
The EN25S16B(2S) is designed to allow either single Sector/Block at a time or full chip erase operation.
The EN25S16B(2S) can be configured to protect part of the memory as the software protected mode.
The device can sustain a minimum of 100K program/erase cycles on each sector or block.
This Data Sheet may be revised by subsequent versions
or modifications due to changes in technical specifications.
Elite Semiconductor Memory Technology Inc.
Rev. 1.2, Issue Date: 2018/08/22

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भाग संख्याविवरणविनिर्माण
EN25S16B-2S16 Megabit 1.8V Serial Flash MemoryEON

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