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M12L128168A-5BG2N डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 2M x 16 Bit x 4 Banks Synchronous DRAM - ESMT

भाग संख्या M12L128168A-5BG2N
समारोह 2M x 16 Bit x 4 Banks Synchronous DRAM
मैन्युफैक्चरर्स ESMT 
लोगो ESMT लोगो 
पूर्व दर्शन
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<?=M12L128168A-5BG2N?> डेटा पत्रक पीडीएफ

M12L128168A-5BG2N pdf
ESMT
BLOCK DIAGRAM
CLK
CKE
Clock
Generator
Address
Mode
Register
CS
RAS
CAS
WE
Row
Address
Buffer
&
Refresh
Counter
Column
Address
Buffer
&
Counter
M12L128168A (2N)
Bank D
Bank C
Bank B
Bank A
Sense Amplifier
Column Decoder
Data Control Circuit
L(U)DQM
DQ
PIN DESCRIPTION
PIN
CLK
CS
CKE
A0 ~ A11
BA0 , BA1
RAS
CAS
WE
L(U)DQM
DQ0 ~ DQ15
VDD / VSS
VDDQ / VSSQ
NC
NAME
System Clock
Chip Select
Clock Enable
Address
Bank Select Address
Row Address Strobe
Column Address Strobe
Write Enable
Data Input / Output Mask
Data Input / Output
Power Supply / Ground
Data Output Power / Ground
No Connection
INPUT FUNCTION
Active on the positive going edge to sample all inputs
Disables or enables device operation by masking or enabling all
inputs except CLK , CKE and L(U)DQM
Masks system clock to freeze operation from the next clock cycle.
CKE should be enabled at least one cycle prior new command.
Disable input buffers for power down in standby.
Row / column address are multiplexed on the same pins.
Row address : RA0~RA11, column address : CA0~CA8
Selects bank to be activated during row address latch time.
Selects bank for read / write during column address latch time.
Latches row addresses on the positive going edge of the CLK with
RAS low. (Enables row access & precharge.)
Latches column address on the positive going edge of the CLK with
CAS low. (Enables column access.)
Enables write operation and row precharge.
Latches data in starting from CAS , WE active.
Makes data output Hi-Z, tSHZ after the clock and masks the output.
Blocks data input when L(U)DQM active.
Data inputs / outputs are multiplexed on the same pins.
Power and ground for the input buffers and the core logic.
Isolated power supply and ground for the output buffers to provide
improved noise immunity.
This pin is recommended to be left No Connection on the device.
Elite Semiconductor Memory Technology Inc.
Publication Date: Jun. 2012
Revision: 1.1
2/45

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डाउनलोड[ M12L128168A-5BG2N Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
M12L128168A-5BG2N2M x 16 Bit x 4 Banks Synchronous DRAMESMT
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