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IRF3710ZGPbF डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - International Rectifier

भाग संख्या IRF3710ZGPbF
समारोह Power MOSFET
मैन्युफैक्चरर्स International Rectifier 
लोगो International Rectifier लोगो 
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IRF3710ZGPbF pdf
IRF3710ZGPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
Breakdown Voltage Temp. Coefficient ––– 0.10 ––– V/°C Reference to 25°C, ID = 1mA
fStatic Drain-to-Source On-Resistance ––– 14 18 mVGS = 10V, ID = 35A
Gate Threshold Voltage
2.0 ––– 4.0
V VDS = VGS, ID = 250µA
gfs Forward Transconductance
35 ––– ––– S VDS = 50V, ID = 35A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 100V, VGS = 0V
––– ––– 250
VDS = 100V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 82 120 nC ID = 35A
Qgs Gate-to-Source Charge
––– 19 28
VDS = 80V
fQgd
Gate-to-Drain ("Miller") Charge
––– 27 40
VGS = 10V
td(on)
Turn-On Delay Time
––– 17 ––– ns VDD = 50V
tr Rise Time
––– 77 –––
ID = 35A
td(off)
tf
Turn-Off Delay Time
Fall Time
––– 41 –––
––– 56 –––
fRG = 6.8
VGS = 10V
LD Internal Drain Inductance
––– 4.5 ––– nH Between lead,
D
LS Internal Source Inductance
––– 7.5 –––
6mm (0.25in.)
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 2900 –––
––– 290 –––
––– 150 –––
––– 1130 –––
––– 170 –––
––– 280 –––
and center of die contact
pF VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 80V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 80V
Diode Characteristics
Parameter
IS Continuous Source Current
Min. Typ. Max. Units
Conditions
––– ––– 59
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 240
A showing the
integral reverse
G
––– ––– 1.3
––– 50 75
––– 100 160
fp-n junction diode.
S
V TJ = 25°C, IS = 35A, VGS = 0V
fns TJ = 25°C, IF = 35A, VDD = 25V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Limited by TJmax, starting TJ = 25°C, L = 0.27mH,
RG = 25, IAS = 35A, VGS =10V. Part not
recommended for use above this value.
ƒ ISD 35A, di/dt 380A/µs, VDD V(BR)DSS,
TJ 175°C.
„ Pulse width 1.0ms; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
† Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ This value determined from sample failure population. 100%
tested to this value in production.
2 www.irf.com

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