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FQD3N80 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - OuCan

भाग संख्या FQD3N80
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स OuCan 
लोगो OuCan लोगो 
पूर्व दर्शन
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<?=FQD3N80?> डेटा पत्रक पीडीएफ

FQD3N80 pdf
FQD3N80
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min Typ Max Units
STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
/TJ
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Current
VDS=800V, VGS=0V
VDS=640V, TJ=125°C
IGSS Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th) Gate Threshold Voltage
VDS=5V, ID=250µA
RDS(ON) Static Drain-Source On-Resistance
VGS=10V, ID=1.5A
gFS Forward Transconductance
VDS=40V, ID=1.5A
VSD Diode Forward Voltage
IS=1A,VGS=0V
IS Maximum Body-Diode Continuous Current
ISM Maximum Body-Diode Pulsed Current
800
900
V
0.78
V/ oC
1
µA
10
±100 nΑ
3.3 4.2 4.5
V
3.8 4.8
2.5 S
0.77 1
V
2.8 A
9A
DYNAMIC PARAMETERS
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate resistance
VGS=0V, VDS=25V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
510 pF
39 pF
3.7 pF
2.9
SWITCHING PARAMETERS
Qg Total Gate Charge
Qgs Gate Source Charge
VGS=10V, VDS=640V, ID=3A
Qgd Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
tD(off)
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=400V, ID=3A,
RG=25
tf Turn-Off Fall Time
trr Body Diode Reverse Recovery Time IF=3A,dI/dt=100A/µs,VDS=100V
Qrr Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V
10 nC
2.6 nC
2.9 nC
21 ns
25 ns
34 ns
19 ns
344 ns
2.2 µC
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
H. L=60mH, IAS=2.2A, VDD=150V, RG=10, Starting TJ=25°C
Page 2 of 6

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अनुशंसा डेटापत्रक

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OuCan


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