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FQD20N10 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel 100-V (D-S) MOSFET - OuCan

भाग संख्या FQD20N10
समारोह N-Channel 100-V (D-S) MOSFET
मैन्युफैक्चरर्स OuCan 
लोगो OuCan लोगो 
पूर्व दर्शन
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<?=FQD20N10?> डेटा पत्रक पीडीएफ

FQD20N10 pdf
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS VGS = 0 V, ID = 250 µA
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
ΔVDS/TJ
ΔVGS(th)/TJ
ID = 250 µA
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
ID(on)
VDS = 100 V, VGS = 0 V
VDS = 100 V, VGS = 0 V, TJ = 55 °C
VDS 5 V, VGS = 10 V
Drain-Source On-State Resistancea
Forward Transconductancea
rDS(on)
gfs
VGS = 10 V, ID = 12 A
VDS = 15 V, ID = 12 A
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
VDS = 12 V, VGS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs VDS = 50 V, VGS = 10 V, ID = 12 A
Gate-Drain Charge
Qgd
Gate Resistance
Rg f = 1 MHz
Turn-On Delay Time
td(on)
Rise Time
Turn-Off Delay Time
tr
td(off)
VDD = 50 V, RL = 5 Ω
ID 10 A, VGEN = 10 V, Rg = 1 Ω
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Currenta
IS
ISM
TC = 25 °C
Body Diode Voltage
VSD IS = 10 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
100
1.3
40
Typ. Max. Unit
165
- 11
0.078
25
V
mV/°C
2.0
± 100
1
10
0.090
V
nA
µA
A
Ω
S
2000
180
60
31
10
9
1.5
10
10
15
10
0.8
50
100
38
12
47
15
15
25
15
50
40
1.2
75
150
pF
nC
Ω
ns
A
V
ns
nC
ns
2

विन्यास 6 पेज
डाउनलोड[ FQD20N10 Datasheet.PDF ]


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