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G1007 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - MOSFET - GFD

भाग संख्या G1007
समारोह MOSFET
मैन्युफैक्चरर्स GFD 
लोगो GFD लोगो 
पूर्व दर्शन
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<?=G1007?> डेटा पत्रक पीडीएफ

G1007 pdf
GOFORD
G1007.
Table 2. Thermal Characteristic
Symbol
Parameter
RJC
Thermal Resistance,Junction-to-Case
Value
3.3
Unit
/W
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
Symbol
Parameter
Conditions
Min
On/Off States
BVDSS
IDSS
IDSS
IGSS
VGS(th)
RDS(ON)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=100)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
VGS=0V ID=250μA
VDS=100V,VGS=0V
VDS=100V,VGS=0V
VGS=±20V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=4.5A
100
1.5
Dynamic Characteristics
Typ
2.0
70
Max Unit
1
5
±100
2.6
85
V
μA
μA
nA
V
gFS Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Switching Times
td(on)
Turn-on Delay Time
tr Turn-on Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Source-Drain Diode Characteristics
VDS=5V,ID=4.5A
VDS=50V,VGS=0V
f=1.0MHz
VDS=50V,ID=4.5A
VGS=10V
VDS=50V,RL=8.6Ω
VGS=10V,RG=3Ω
5
612
120
91
11
1.9
2.8
8
3
17
4.5
S
PF
PF
PF
nC
nC
nC
nS
nS
nS
nS
ISD Source-Drain Current(Body Diode)
14 A
ISDM Pulsed Source-Drain Current(Body Diode)
VSD Forward On Voltage(Note 1)
trr Reverse Recovery Time(Note 1)
Qrr Reverse Recovery Charge(Note 1)
TJ=25,ISD=1A,VGS=0V
TJ=25,IF=4.5A
di/dt=500A/μs
56 A
0.74 1
V
21 nS
97 nC
ton Forward Turn-on Time
Intrinsic turn-on time is negligible(turn-on is dominated by LS+LD)
Notes 1.Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1.5%, Starting TJ=25
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