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KBU12D डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Single Phase Bridge Rectifier - Diotec

भाग संख्या KBU12D
समारोह Single Phase Bridge Rectifier
मैन्युफैक्चरर्स Diotec 
लोगो Diotec लोगो 
पूर्व दर्शन
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<?=KBU12D?> डेटा पत्रक पीडीएफ

KBU12D pdf
KBU12A ... KBU12M
Characteristics
Forward voltage – Durchlass-Spannung
Leakage current – Sperrstrom
Reverse recovery time – Sperrverzug
Tj = 25°C
IF = 12 A
Tj = 25°C
VR = VRRM
IF = 0.5 A through/über IR = 1 A to IR = 0.25 A
Typical junction capacitance – Typische Sperrschichtkapazität
Thermal resistance junction to ambient (per device)
Wärmewiderstand Sperrschicht – Umgebung (pro Bauteil)
VR = 4 V
Thermal resistance junction to case (per device)
Wärmewiderstand Sperrschicht – Gehäuse (pro Bauteil)
Kennwerte
VF < 1.0 V 1)
IR < 5 µA 1)
trr typ. 1500 ns 1)
Cj 120 pF 1)
RthA < 18 K/W 2)
RthC < 2.7 K/W
R 3)
t
~
_+
~
Type
Typ
C 4)
L
KBU12A
KBU12B
KBU12D
KBU12G
KBU12J
KBU12K
KBU12M
Recomm. protective resistance
Empf. Schutzwiderstand
Rt [Ω] 3)
0.2
0.4
0.8
1.6
2.4
3.2
4.0
Admiss. load capacitor at Rt
Zul. Ladekondensator mit Rt
CL [µF] 4)
20000
10000
5000
2500
1500
1000
800
120
[%]
100
80
60
103
[A]
102
10
Tj = 125°C
Tj = 25°C
40
20
IFAV
0
0 TC 50 100 150 [°C]
Rated forward current vs. temp. of the case
Zul. Richtstrom in Abh. v. d. Gehäusetemperatur
1
IF
10-1
270a-(12a-1v)
0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder oder Internet
1 Valid per diode – Gültig pro Diode
2 Valid, if leads are kept at ambient temperature at a distance of 5 mm from case
Gültig, wenn die Anschlussdrähte in 5 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
3 Rt = VRRM / IFSM
Rt is the equivalent resistance of any protective element which ensures that IFSM is not exceeded
Rt ist der Ersatzwiderstand eines jeglichen Schutzelementes, welches ein Überschreiten von IFSM verhindert
4 CL = 5 ms / Rt
If the Rt CL time constant is less than a quarter of the 50Hz mains period, CL can be charged completely in a
single half wave of the mains. Hence, IFSM occurs as a single pulse only!
Falls die Rt CL Zeitkonstante kleiner ist als ¼ der 50Hz-Netzperiode, kann CL innerhalb einer einzigen
Netzhalbwelle komplett geladen werden. IFSM tritt dann nur als Einzelpuls auf!
2
http://www.diotec.com/
© Diotec Semiconductor AG

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डाउनलोड[ KBU12D Datasheet.PDF ]


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