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40H20AD डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Power MOSFET - OuCan

भाग संख्या 40H20AD
समारोह N-Channel Enhancement Mode Power MOSFET
मैन्युफैक्चरर्स OuCan 
लोगो OuCan लोगो 
पूर्व दर्शन
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<?=40H20AD?> डेटा पत्रक पीडीएफ

40H20AD pdf
FQB200N04
Thermal Characteristic
Thermal Resistance,Junction-to-Case (Note 2)
RθJc 0.53 /W
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=40V,VGS=0V
VGS=±20V,VDS=0V
40 -
-
V
- - 1 μA
- - ±100 nA
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=40A
VDS=5V,ID=40A
23
- 2.0
60 -
4
2.6
-
V
m
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
VDS=25V,VGS=0V,
F=1.0MHz
- 7182
- 1355
-
-
PF
PF
Crss
- 1244
-
PF
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=20V,VGS=10V,
RGEN=2.5
VDS=20V,ID=20A,
VGS=10V
- 21
- 37
- 75
- 40
- 130
- 36
- 56
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
VGS=0V,IS=20A
- - 1.2
V
IS
-
- - 200
A
trr
TJ = 25°C, IF = 20A
- 50
-
nS
Qrr
di/dt = 500A/μs(Note3)
- 61
-
nC
Forward Turn-On Time
ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS conditionTj=25,VDD=20V,VG=10V,L=0.5mH,Rg=25
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