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FKBA4400 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Dual N-Ch MOSFETs - FETek

भाग संख्या FKBA4400
समारोह Dual N-Ch MOSFETs
मैन्युफैक्चरर्स FETek 
लोगो FETek लोगो 
पूर्व दर्शन
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<?=FKBA4400?> डेटा पत्रक पीडीएफ

FKBA4400 pdf
FETek Technology Corp.
FKBA4400
Dual N-Ch Fast Switching MOSFETs
Die1 N-Channel Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=12A
VGS=4.5V , ID=10A
VGS=VDS , ID =250uA
VDS=32V , VGS=0V , TJ=25
VDS=32V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=12A
VDS=0V , VGS=0V , f=1MHz
VDS=32V , VGS=4.5V , ID=12A
VDD=20V , VGS=10V , RG=3.3
ID=12A
VDS=15V , VGS=0V , f=1MHz
Min.
40
---
---
---
1.0
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.032
---
---
---
-4.8
---
---
---
34
2.1
10
2.55
4.8
2.8
12.8
21.2
6.4
1013
107
76
Max.
---
---
17
22
2.5
---
1
5
±100
---
---
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
m
V
mV/
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
Parameter
Continuous Source Current1,5
Pulsed Source Current2,5
Diode Forward Voltage2
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
Min.
---
---
---
Typ.
---
---
---
Max.
39
78
1
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=25A
4.The power dissipation is limited by 150junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Unit
A
A
V
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
2

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डाउनलोड[ FKBA4400 Datasheet.PDF ]


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