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FKBA0036 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Ch MOSFETs - FETek

भाग संख्या FKBA0036
समारोह N-Ch MOSFETs
मैन्युफैक्चरर्स FETek 
लोगो FETek लोगो 
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<?=FKBA0036?> डेटा पत्रक पीडीएफ

FKBA0036 pdf
FETek Technology Corp.
FKBA0036
N-Ch 100V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=7A
VGS=4.5V , ID=5A
VGS=VDS , ID =250uA
VDS=80V , VGS=0V , TJ=25
VDS=80V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=7A
VDS=0V , VGS=0V , f=1MHz
VDS=80V , VGS=10V , ID=7A
VDD=50V , VGS=10V , RG=3.3
ID=7A
VDS=15V , VGS=0V , f=1MHz
Min.
100
---
---
---
1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.08
15.5
19
---
-5.5
---
---
---
24
1.6
36
5
10
11.5
29
42
18
1930
245
125
Max.
---
---
18.5
23.5
2.5
---
10
100
±100
---
---
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
m
V
mV/
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,6
Pulsed Source Current2,6
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
IF=7A , dI/dt=100A/µs , TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
48
29
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH
4.The power dissipation is limited by 150junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Max.
58
130
1.2
---
---
Unit
A
A
V
nS
nC
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
2

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डाउनलोड[ FKBA0036 Datasheet.PDF ]


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