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FKBA6024A डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Ch MOSFETs - FETek

भाग संख्या FKBA6024A
समारोह N-Ch MOSFETs
मैन्युफैक्चरर्स FETek 
लोगो FETek लोगो 
पूर्व दर्शन
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<?=FKBA6024A?> डेटा पत्रक पीडीएफ

FKBA6024A pdf
FKBA6024A
FETek Technology Corp.
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=30A
VGS=VDS , ID =250uA
VDS=48V , VGS=0V , TJ=25
VDS=48V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=30A
VDS=0V , VGS=0V , f=1MHz
VDS=48V , VGS=10V , ID=15A
VDD=30V , VGS=10V , RG=3.3,
ID=48A
VDS=15V , VGS=0V , f=1MHz
Min.
60
---
---
2.5
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.058
---
---
-7.8
---
---
---
50
1.4
83.7
28.6
29.3
38.1
73.3
51.6
26.1
5460
575
276
Max.
---
---
4.8
4.5
---
1
5
±100
---
---
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
m
V
mV/
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
VSD
trr
Qrr
Parameter
Continuous Source Current1,5
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=1A , TJ=25
IF=30A , dI/dt=100A/µs ,
TJ=25
Min.
---
---
---
---
Typ.
---
---
27
28
Max.
85
1.2
---
---
Unit
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=0.1mH,IAS=70A
4.The power dissipation is limited by 150junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
6.Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 85A.
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
2

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