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FKBA6006 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Ch MOSFETs - FETek

भाग संख्या FKBA6006
समारोह N-Ch MOSFETs
मैन्युफैक्चरर्स FETek 
लोगो FETek लोगो 
पूर्व दर्शन
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<?=FKBA6006?> डेटा पत्रक पीडीएफ

FKBA6006 pdf
FKBA6006
FETek Technology Corp.
N-Ch 60V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=250uA
Reference to 25, ID=1mA
VGS=10V , ID=20A
VGS=4.5V , ID=10A
VGS=VDS , ID =250uA
VDS=48V , VGS=0V , TJ=25
VDS=48V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=5V , ID=20A
VDS=0V , VGS=0V , f=1MHz
VDS=48V , VGS=4.5V , ID=15A
VDD=30V , VGS=10V , RG=3.3,
ID=15A
VDS=15V , VGS=0V , f=1MHz
Min.
60
---
---
---
1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ.
---
0.057
---
---
---
-5.68
---
---
---
35.2
1.7
19.3
7.1
7.6
7.2
50
36.4
7.6
2423
145
97
Max.
---
---
16
20
2.5
---
1
5
±100
---
---
---
---
---
---
---
---
---
---
---
---
Unit
V
V/
m
V
mV/
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,5
Pulsed Source Current2,5
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
Min.
VG=VD=0V , Force Current
---
---
VGS=0V , IS=A , TJ=25
---
IF=15A , dI/dt=100A/µs , TJ=25
---
---
Typ.
---
---
---
16.3
11
Max.
40
80
1
---
---
Unit
A
A
V
nS
nC
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=28A
4.The power dissipation is limited by 150junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
2

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