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FKBB3105 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - P-Ch MOSFETs - FETek

भाग संख्या FKBB3105
समारोह P-Ch MOSFETs
मैन्युफैक्चरर्स FETek 
लोगो FETek लोगो 
पूर्व दर्शन
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<?=FKBB3105?> डेटा पत्रक पीडीएफ

FKBB3105 pdf
FKBB3105
FETek Technology Corp.
P-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 , unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage
BVDSS/TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th)
VGS(th)
Gate Threshold Voltage
VGS(th) Temperature Coefficient
IDSS Drain-Source Leakage Current
IGSS
gfs
Rg
Qg
Qgs
Qgd
Td(on)
Tr
Td(off)
Tf
Ciss
Coss
Crss
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Conditions
VGS=0V , ID=-250uA
Reference to 25, ID=-1mA
VGS=-10V , ID=-30A
VGS=-4.5V , ID=-15A
VGS=VDS , ID =-250uA
VDS=-24V , VGS=0V , TJ=25
VDS=-24V , VGS=0V , TJ=55
VGS=±20V , VDS=0V
VDS=-5V , ID=-30A
VDS=0V , VGS=0V , f=1MHz
VDS=-15V , VGS=-4.5V , ID=-15A
VDD=-15V , VGS=-10V , RG=3.3
ID=-15A
VDS=-15V , VGS=0V , f=1MHz
Min.
-30
---
---
---
-1.2
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
---
Typ. Max.
--- ---
-0.0232 ---
--- 14
--- 22
--- -2.5
4.6 ---
--- -1
--- -5
--- ±100
30 ---
9 ---
22 ---
8.7 ---
7.2 ---
8 ---
73.7 ---
61.8 ---
24.4 ---
2215 ---
310 ---
237 ---
Unit
V
V/
m
V
mV/
uA
nA
S
nC
ns
pF
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current1,5
Pulsed Source Current2,5
Diode Forward Voltage2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
VG=VD=0V , Force Current
VGS=0V , IS=-1A , TJ=25
IF=-15A , dI/dt=100A/µs ,
TJ=25
Min.
---
---
---
---
---
Typ.
---
---
---
19
9
Max.
-42
-130
-1
---
---
Note :
1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width 300us , duty cycle 2%
3.The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.1mH,IAS=-50A
4.The power dissipation is limited by 150junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
Unit
A
A
V
nS
nC
Data and specifications subject to change without notice.
www.fetek.com.tw Ver : A
2

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