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IRFP350FI डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS - STMicroelectronics

भाग संख्या IRFP350FI
समारोह N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=IRFP350FI?> डेटा पत्रक पीडीएफ

IRFP350FI pdf
IRFP350FI
THERMAL DATA
Rthj _case Thermal resistance junction-case
Rthc-s Thermal resistance case-sink
Rthj _amb Thermal resistance junction-ambient
TI Maximum lead temperature for soldering purpose
max
typ
max
1.78
0.1
30
300
°C/W
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Parameters
Test Conditions
OFF
V(BR) oss Drain-source
breakdown voltage
10 = 250 JlA
VGs= 0
400
loss Zero gate voltage
Vos= Max Rating
drain current (VGS = 0) Vos= Max Rating x 0.8 Tj = 125°C
IGSS Gate-body leakage
current (Vos = 0)
VGs= ±20 V
V
250 IJlA
1000 IJlA
±100 nA
ON **
VGS (th) Gate threshold voltage Vos= VGS
10 = 250 JlA
2
10 (on) On-state drain current Vos > 10 (on) X Ros (on) max' VGS = 10 V 10
Ros (on) Static drain-source
on resistance
VGs= 10 V
10= 8.0 A
4V
A
0.3 n
DYNAMIC
gfs **
Forward
transconductance
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
Vos > 10 (on) X Ros (on) max
10= 8.0 A
Vos= 25 V
VGs= 0
f= 1 MHz
8.0
mho
3000
600
200
pF
pF
pF
SWITCHING
td (on)
tr
td (off)
tf
09
Turn-on time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Voo= 180 V
Ri= 4.7 n
10= 8.0 A
(see test circuit)
VGs= 10 V
10= 18 A
Vos= Max Rating x 0.8
(see test circuit)
35 ns
65 ns
150 ns
75 ns
120 nC
350

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डाउनलोड[ IRFP350FI Datasheet.PDF ]


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