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AFN3416 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - Alfa-MOS

भाग संख्या AFN3416
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Alfa-MOS 
लोगो Alfa-MOS लोगो 
पूर्व दर्शन
1 Page
		
<?=AFN3416?> डेटा पत्रक पीडीएफ

AFN3416 pdf
Alfa-MOS
Technology
AFN3416
20V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
20
±12
4.0
3.2
10
1.6
1.25
0.8
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A July 2010
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=16V,VGS=0V
VDS=16V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VDSЊ5V,VGS=2.5V
VGS=4.5V,ID=4.0A
VGS=2.5V,ID=3.2A
VGS=1.8V,ID=2.8A
VDS=10V,ID=5.0A
IS=1.5A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V,VGS=4.5V
ID3.6A
VDS=10V,VGS=0V
f=1MHz
VDD=10V,RL=5.5
ID3.6A,VGEN=4.5V
RG=6
Min. Typ Max. Unit
20 V
0.4 1.0
±100
1
10
nA
uA
6
4
A
23 26
27 30 m
30 36
35 S
0.85 1.2 V
13 19
2.8 nC
2.0
1050
235 pF
115
10 20
10
25
20
40
ns
10 20
www.alfa-mos.com
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