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AFN5510S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - Alfa-MOS

भाग संख्या AFN5510S
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Alfa-MOS 
लोगो Alfa-MOS लोगो 
पूर्व दर्शन
1 Page
		
<?=AFN5510S?> डेटा पत्रक पीडीएफ

AFN5510S pdf
Alfa-MOS
Technology
AFN5510S
100V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Single Pulse Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TC=25к
TC=70к
TC=25к
TC=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
PD
TJ
TSTG
RθJA
Typical
100
±20
45
28
50
40
33
85
2
150
-55/150
62.5
Unit
V
V
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Jan. 2014
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=80V,VGS=0V
VDS=80V,VGS=0V
TJ=85к
VDSЊ5V,VGS=10V
VGS=10V,ID=30A
VDS=5V,ID=30A
IS=10A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=50V,VGS=10V
ID12A
VDS=12V,VGS=0V
f=1MHz
VDD=50V,RL=5
ID10A,VGEN=10V
RG=1
Min. Typ Max. Unit
100 V
2.5 4.5
±100 nA
1
5 uA
40 A
17 22 m
25 S
0.7 1.3 V
30 50
10 nC
10
2000
220 pF
65
10 20
10
15
20
30
ns
10 20
www.alfa-mos.com
Page 2

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