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AFN5008S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - Alfa-MOS

भाग संख्या AFN5008S
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Alfa-MOS 
लोगो Alfa-MOS लोगो 
पूर्व दर्शन
1 Page
		
<?=AFN5008S?> डेटा पत्रक पीडीएफ

AFN5008S pdf
Alfa-MOS
Technology
AFN5008S
40V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings (TA=25Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Tc=25
Tc=70
Tc=25
L = 0.1 mH
Tc=25
Tc=70
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
PD
TJ
TSTG
RθJA
Typical
40
±20
50
44
100
40
30
45
40
15
150
-55/150
62.5
Unit
V
V
A
A
A
A
mJ
W
/W
Electrical Characteristics (TA=25Unless otherwise noted)
Parameter
Symbol
Conditions
Static
Drain-Source Breakdown Voltage
V(BR)DSS VGS=0V,ID=250uA
Gate Threshold Voltage
VGS(th) VDS=VGS,ID=250uA
Gate Leakage Current
IGSS VDS=0V,VGS=±20V
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
IDSS
ID(on)
RDS(on)
gFS
VDS=32V,VGS=0V
VDS=32V,VGS=0V
TJ=85
VDS5V,VGS=10V
VGS=10V,ID=20A
VGS=4.5V,ID=15A
VDS=15V,ID=15A
Diode Forward Voltage
VSD IS=10A,VGS=0V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=20V,VGS=4.5V
ID= 20A
VDS=20V,VGS=0V
f=1MHz
VDD=20V,RL=1
ID20A,VGEN=10V
RG=1
©Alfa-MOS Technology Corp.
Rev.B Jan. 2018
Min. Typ Max. Unit
40 V
1.0 2.0
±100 nA
1
10 uA
50 A
5.6
6.8
8.5
9.5
m
75 S
0.85 1.3 V
16 24
6.5 nC
4.5
2400
260 pF
100
8 15
5
40
10
60
ns
5 10
www.alfa-mos.com
Page 2

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