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AFN2604 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - Alfa-MOS

भाग संख्या AFN2604
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Alfa-MOS 
लोगो Alfa-MOS लोगो 
पूर्व दर्शन
1 Page
		
<?=AFN2604?> डेटा पत्रक पीडीएफ

AFN2604 pdf
Alfa-MOS
Technology
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
AFN2604
40V N-Channel
Enhancement Mode MOSFET
TA=25к
TA=70к
L = 0.1 mH
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
IAS
EAS
PD
TJ
TSTG
RθJA
Typical
40
±20
25
20
40
8
25
35
40
15
150
-55/150
62.5
Unit
V
V
A
A
A
A
mJ
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Nov. 2010
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=32V,VGS=0V
VDS=32V,VGS=0V
TJ=85к
VDSЊ5V,VGS=10V
VGS=10V,ID=20A
VGS=4.5V,ID=12A
VDS=15V,ID=5.0A
IS=2A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=20V,VGS=4.5V
ID= 5A
VDS=20V,VGS=0V
f=1MHz
VDD=20V,RL=4
ID5.0A,VGEN=10V
RG=1
Min. Typ Max. Unit
40 V
1.5 3.0
±100 nA
1
10 uA
20 A
16
30
22
40
m
25 S
0.85 1.2 V
10 14
2.8 nC
3.2
850
110 pF
75
6 12
10
20
20
36
ns
6 12
www.alfa-mos.com
Page 2

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AFN2604N-Channel Enhancement Mode MOSFETAlfa-MOS
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