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AFN3430W डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - Alfa-MOS

भाग संख्या AFN3430W
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Alfa-MOS 
लोगो Alfa-MOS लोगो 
पूर्व दर्शन
1 Page
		
<?=AFN3430W?> डेटा पत्रक पीडीएफ

AFN3430W pdf
Alfa-MOS
Technology
AFN3430W
90V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
90
±20
4.0
3.2
8
1.7
2.0
1.3
150
-55/150
120
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Apr. 2012
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=72V,VGS=0V
VDS=72V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS=10V,ID=4.0A
VGS=4.5V,ID=3.2A
VDS=15V,ID=5.3A
IS=2.0A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=50V,VGS=5V
ID3A
VDS=50V,VGS=0V
f=1MHz
VDD=50V,RL=12.5
ID3.0A,VGEN=10V
RG=1.0
Min. Typ Max. Unit
90 V
0.5 2.5
±100 nA
1
5 uA
10 A
128
135
150
155
m
24 S
0.8 1.2 V
12 18
4.2 nC
5.2
380
90 pF
60
15 25
15
20
25
30
ns
15 25
www.alfa-mos.com
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