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AFN501DEA डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Depletion Mode Power MOSFET - Alfa-MOS

भाग संख्या AFN501DEA
समारोह N-Channel Depletion Mode Power MOSFET
मैन्युफैक्चरर्स Alfa-MOS 
लोगो Alfa-MOS लोगो 
पूर्व दर्शन
1 Page
		
<?=AFN501DEA?> डेटा पत्रक पीडीएफ

AFN501DEA pdf
Alfa-MOS
Technology
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current
Power Dissipation
Power Dissipation Derate
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
AFN501DEA
600V N-Channel
Depletion Mode Power MOSFET
Tc=25к
Tc=100к
TA=25к
TA=25к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJC
RθJA
Typical
600
±20
30
27
120
30
0.5
0.004
-55/150
-55/150
50
250
Unit
V
V
mA
mA
mA
W
W/к
к
к
к/W
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Symbol
Conditions
Drain-Source Breakdown Voltage
V(BR)DSS VGS=-5V,ID=250uA
Gate Threshold Voltage
VGS(th) VDS=3V,ID=8uA
Gate Leakage Current
Drain-Source Leakage Current
On-state drain current
Drain-Source On-Resistance
Diode Forward Voltage
IGSS
ID(off)
IDSS
RDS(on)
VSD
VDS=0V,VGS=±20V
VDS=600V,VGS=-5V
VGS=0V, VDS=25V
VGS=10V,ID=16mA
VGS=0V,ID=3mA
IS=16mA,VGS=-5V
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Qg VDS=400V,VGS=-5V to 5V
Qgs ID0.01A
Qgd (Note 1,2)
Ciss
Coss
Crss
VDS=25V,VGS=-5V
f=1MHz
td(on)
VDD=300V
tr ID0.01A,VGEN=-5….7V
td(off)
tf
RG=6
(Note 1,2)
Notes:
1. Pulse Test: Pulse width 300µs,Duty cycle2%
2. Essentially independent of operating temperature
Min.
600
-2.7
12
Typ
310
330
0.85
Max. Unit
V
-1.0
±10 uA
0.1 uA
mA
700
700
1.2 V
1.8
0.75 nC
0.56
99
9.1 pF
5
18
90
93
ns
210
©Alfa-MOS Technology Corp.
Rev.A May 2013
www.alfa-mos.com
Page 2

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