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10N80C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 800V N-Channel MOSFET - Fairchild Semiconductor

भाग संख्या 10N80C
समारोह 800V N-Channel MOSFET
मैन्युफैक्चरर्स Fairchild Semiconductor 
लोगो Fairchild Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=10N80C?> डेटा पत्रक पीडीएफ

10N80C pdf
Package Marking and Ordering Information
Device Marking Device
FQA10N80C
FQA10N80C
FQA10N80C
FQA10N80C_F109
Package
TO-3P
TO-3PN
Reel Size
--
--
Tape Width
--
--
Quantity
30
30
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
BVDSS/
TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 800 V, VGS = 0 V
VDS = 640 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 5.0A
VDS = 50 V, ID = 5.0A
(Note 4)
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 400 V, ID = 10.0A,
RG = 25
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4, 5)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS = 640 V, ID = 10.0A,
VGS = 10 V
(Note 4, 5)
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward Voltage
VGS = 0 V, IS =10.0 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 10.0 A,
dIF / dt = 100 A/µs
(Note 4)
800
--
--
--
--
--
3.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 17.3mH, IAS =10A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 10A, di/dt 200A/µs, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature
Typ
--
0.98
--
--
--
--
--
0.93
5.8
2150
180
15
50
130
90
80
45
13.5
17
--
--
--
730
10.9
Max Units
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
5.0 V
1.1
-- S
2800
230
20
pF
pF
pF
110 ns
270 ns
190 ns
170 ns
58 nC
-- nC
-- nC
10.0 A
40.0 A
1.4 V
-- ns
-- µC
FQA10N80C Rev. A1
2
www.fairchildsemi.com

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