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2N60BS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Super Junction Power MOSFET - PINGWEI

भाग संख्या 2N60BS
समारोह N-Channel Super Junction Power MOSFET
मैन्युफैक्चरर्स PINGWEI 
लोगो PINGWEI लोगो 
पूर्व दर्शन
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<?=2N60BS?> डेटा पत्रक पीडीएफ

2N60BS pdf
Electrical Characteristics (Tc=25,unless otherwise noted)
Parameter
Symbol
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
Breakdown Temperature Coefficient
ΔBVDSS
/ΔTJ
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current,Forward
IGSSF
Gate-Body Leakage Current,Reverse
IGSSR
On Characteristics
Gate-Source Threshold Voltage
VGS(th)
Drain-Source On-State Resistance
RDS(on)
Dynamic Characteristics
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Test Conditions
VGS=0V,ID=250uA
Reference to 25℃,
ID=250uA
VDS=600V,VGS=0V
VGS=30V,VDS=0V
VGS=-30V,VDS=0V
VDS=VGS,ID=250uA
VGS=10V,ID=1A
VDS=50V,VGS=0V,
f=1.0MHZ
Switching Characteristics
Turn-On Delay Time
td(on) VDD=380V,ID=1A,
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
RG=50Ω
(Note4,5)
Turn-Off Fall Time
tf
Total Gate Charge
Qg VDS=480V,ID=2A,
Gate-Source Charge
Qgs VGS=10V, (Note4,5)
Gate-Drain Charge
Qgd
Drain-Source Body Diode Charcteristics and Maximum Ratings
Continuous Diode Forward Current
IS
Pulsed Diode Forward Current
ISM
Diode Forward Voltage
VSD IS=2A,VGS=0V
Reverse Recovery Time
trr VGS=0V,IS=2A,
Reverse Recovery Charge
Qrr dIF/dt=100A/us, (Note4)
Notes
1. Repetitive Rating:pulse width limited by maximum junction temperature.
2. VDD=50V,L=22.5mH,Rg=25Ω,IAS=2A ,starling TJ=25.
3. ISDID,dI/dt=200A/us,VDDBVDSS,starting TJ=25.
4. Pulse width≤300us;duty cycle≤2%.
5. Repetitive rating; pulse width limited by maximum junction temperature.
Min Typ Max Units
600
0.6
--
--
--
V
V/
1 μA
1 μA
-1 μA
24
2.2 2.5
V
Ω
190
13
1.1
pF
pF
pF
6
3
65
11
3.2
0.6
1.2
ns
ns
ns
ns
nC
nC
nC
--
2
--
6
- - 1.3
140
0.65
A
A
V
ns
μC
Version1.0-2015.2
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डाउनलोड[ 2N60BS Datasheet.PDF ]


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