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AFN3414AS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - Alfa-MOS

भाग संख्या AFN3414AS
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Alfa-MOS 
लोगो Alfa-MOS लोगो 
पूर्व दर्शन
1 Page
		
<?=AFN3414AS?> डेटा पत्रक पीडीएफ

AFN3414AS pdf
Alfa-MOS
Technology
AFN3414AS
20V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25
TA=70
TA=25
TA=70
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
20
±12
4.0
2.6
10
1.6
1.25
0.8
150
-55/150
120
Unit
V
V
A
A
A
W
/W
Electrical Characteristics
(TA=25Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.B Apr. 2018
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=16V,VGS=0V
VDS=16V,VGS=0V
TJ=85
VDS5V,VGS=4.5V
VDS5V,VGS=2.5V
VGS=4.5V,ID=4.0A
VGS=2.5V,ID=3.2A
VGS=1.8V,ID=2.6A
VDS=5V,ID=3.6A
IS=1.6A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V,VGS=4.5V
ID3.6A
VDS=10V,VGS=0V
f=1MHz
VDD=10V,RL=5.5Ω
ID3.6A,VGEN=4.5V
RG=6Ω
Min. Typ Max. Unit
20
V
0.5 1.0
±100 nA
1
uA
10
6
4
A
25 35
32 45 mΩ
50 65
10 S
0.85 1.2 V
5.4
0.65
1.4
340
115
33
12
36
34
10
10
nC
pF
25
60
60
ns
25
www.alfa-mos.com
Page 2

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डाउनलोड[ AFN3414AS Datasheet.PDF ]


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