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AFN4248W डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - Alfa-MOS

भाग संख्या AFN4248W
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Alfa-MOS 
लोगो Alfa-MOS लोगो 
पूर्व दर्शन
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<?=AFN4248W?> डेटा पत्रक पीडीएफ

AFN4248W pdf
Alfa-MOS
Technology
AFN4248W
20V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25к Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150к)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25к
TA=70к
TA=25к
TA=70к
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
20
±12
6.0
4.0
20
1.5
2.8
1.8
150
-55/150
62.5
Unit
V
V
A
A
A
W
к
к
к/W
Electrical Characteristics
(TA=25к Unless otherwise noted)
Static
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Jan. 2013
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=16V,VGS=0V
VDS=16V,VGS=0V
TJ=85к
VDSЊ5V,VGS=4.5V
VGS= 4.5V,ID=6.0A
VGS= 2.5V,ID=5.0A
VGS= 1.8V,ID=4.0A
VDS=5V,ID=6A
IS=1.6A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V,VGS=4.5V
ID6.0A
VDS=20V,VGS=0V
f=1MHz
VDD=10V,RL=1.4
ID1.0A,VGEN=4.5V
RG=3
Min. Typ Max. Unit
20 V
0.4 1.0
±100 nA
1
30 uA
10 A
20 28
23 32 m
28 42
25 S
0.7 1.2 V
650
200 pC
180
700
75 pF
45
8 12
12
32
20
40
ns
10 15
www.alfa-mos.com
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