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AFN4062S डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - Alfa-MOS

भाग संख्या AFN4062S
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Alfa-MOS 
लोगो Alfa-MOS लोगो 
पूर्व दर्शन
1 Page
		
<?=AFN4062S?> डेटा पत्रक पीडीएफ

AFN4062S pdf
Alfa-MOS
Technology
AFN4062S
60V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Rating
(TA=25Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
TA=25
TA=70
TA=25
Single Pulse Avalanche Current
L=0.1mH
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Maximum Junction-to-Foot (Drain)
TA=25
TA=75
t 10 s
Steady-State
Symbol
VDSS
VGSS
IDSM
IDM
IS
IAS
EAS
PD
TJ
TSTG
RθJA
RθJF
Typical
60
±20
22
18
150
3.2
25
30
3.5
2.2
150
-55/150
29
13
Unit
V
V
A
mJ
W
/W
Electrical Characteristics
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A Jan. 2018
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=48V,VGS=0V
VDS=48V,VGS=0V
TJ=85
VDS≧5V,VGS=10V
VGS=10V,ID=20A
VGS=6.0V,ID=15A
VGS=4.5V,ID=10A
VDS=15V,ID=20A
IS=20A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=30V,VGS=4.5V
ID10A
VDS=30V,VGS=0V
f=1MHz
VDD=30V,RL=30
ID10A,VGEN=10V
RG=1
Min. Typ Max. Unit
60
1.0
2.5 V
±100 nA
1
30 uA
30 A
3.7 4.8
4.6 6.0 m
5.8 7.5
80 S
0.8 1.3 V
18 35
9 nC
6
3175
1250
pF
100
20 40
10
30
20
60
ns
10 20
www.alfa-mos.com
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