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AFN3316W डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - Alfa-MOS

भाग संख्या AFN3316W
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Alfa-MOS 
लोगो Alfa-MOS लोगो 
पूर्व दर्शन
1 Page
		
<?=AFN3316W?> डेटा पत्रक पीडीएफ

AFN3316W pdf
Alfa-MOS
Technology
AFN3316W
60V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25
TA=70
TA=25
TA=70
TA=25
TA=70
Symbol
VDSS
VGSS
ID
IDM
IS
PD
PDSM
TJ
TSTG
RθJA
Typical
60
±20
8
6
10
1.6
17
8
3.5
2.5
150
-55/150
120
Unit
V
V
A
A
A
W
W
/W
Electrical Characteristics
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A July 2012
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±20V
VDS=60V,VGS=0V
VDS=60V,VGS=0V
TJ=85
VDS5V,VGS=10V
VGS=10V,ID=8A
VGS=4.5V,ID=6A
VDS=15V,ID=2.0A
IS=2.0A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=30V,VGS=10V
ID3A
VDS=35V,VGS=0V
f=1MHz
VDD=30V,RL=10Ω
ID5.0A,VGEN=10V
RG=3.0V
Min. Typ Max. Unit
60
0.7
2.5 V
±100 nA
1
10 uA
10 A
128
136
140
148
mΩ
12 S
0.85 1.2 V
6 15
1.5 nC
2.0
350
30 pF
20
6 12
6
12
12
20
ns
4 10
www.alfa-mos.com
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