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AFN3302W डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - Alfa-MOS

भाग संख्या AFN3302W
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Alfa-MOS 
लोगो Alfa-MOS लोगो 
पूर्व दर्शन
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<?=AFN3302W?> डेटा पत्रक पीडीएफ

AFN3302W pdf
Alfa-MOS
Technology
AFN3302W
20V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25
TA=70
TA=25
TA=70
TA=25
TA=70
Symbol
VDSS
VGSS
ID
IDM
IS
PD
PDSM
TJ
TSTG
RθJA
Typical
20
±12
14
10
40
1.6
36
18
3
2
150
-55/150
120
Unit
V
V
A
A
A
W
W
/W
Electrical Characteristics
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A July 2011
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=16V,VGS=0V
VDS=16V,VGS=0V
TJ=85
VDS5V,VGS=10V
VGS=4.5V,ID=14A
VGS=2.5V,ID=12A
VGS=1.8V,ID=10A
VDS=5V,ID=3.6A
IS=1.6A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=10V,VGS=4.5V
ID4.0A
VDS=10V,VGS=0V
f=1MHz
VDD=10V,RL=2.2Ω
ID4.0A,VGEN=4.5V
RG=1Ω
Min. Typ Max. Unit
20
0.4
1.0 V
±100 nA
1
10 uA
40 A
11 14
15 18 mΩ
20 26
10 S
0.85 1.5 V
8.2 14
1.2 nC
1.0
850
120 pF
60
10 16
16
31
25
45
ns
10 16
www.alfa-mos.com
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