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AFN2444WS डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - Alfa-MOS

भाग संख्या AFN2444WS
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Alfa-MOS 
लोगो Alfa-MOS लोगो 
पूर्व दर्शन
1 Page
		
<?=AFN2444WS?> डेटा पत्रक पीडीएफ

AFN2444WS pdf
Alfa-MOS
Technology
AFN2444WS
30V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
TA=25
TA=70
TA=25
TA=70
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
Typical
30
±20
11
8.8
40
2.9
3.5
2.2
150
-55/150
36
Unit
V
V
A
A
A
W
/W
Electrical Characteristics
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.B Jan. 2018
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=85
VDS5V,VGS=10V
VGS=10V,ID=3.0A
VGS=4.5V,ID=3.0A
VDS=10V,ID=7.4A
IS=3.0A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V,VGS=4.5V
ID11A
VDS=15V,VGS=0V
f=1MHz
VDD=15V,RL=1.7
ID8.8A,VGEN=4.5V
RG=1
Min. Typ Max. Unit
30 V
1.0 2.5
±100
1
10
nA
uA
20 A
11
14
15
20
m
24 S
0.85 1.3 V
5 10
1.5 nC
1.7
560
125 pF
55
12 25
12
15
25
30
ns
10 20
www.alfa-mos.com
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