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AFN2918W डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode MOSFET - Alfa-MOS

भाग संख्या AFN2918W
समारोह N-Channel Enhancement Mode MOSFET
मैन्युफैक्चरर्स Alfa-MOS 
लोगो Alfa-MOS लोगो 
पूर्व दर्शन
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<?=AFN2918W?> डेटा पत्रक पीडीएफ

AFN2918W pdf
Alfa-MOS
Technology
AFN2918W
30V N-Channel
Enhancement Mode MOSFET
Absolute Maximum Ratings
(TA=25Unless otherwise noted)
Drain-Source Voltage
Gate –Source Voltage
Parameter
Continuous Drain Current(TJ=150)
Pulsed Drain Current
Continuous Source Current(Diode Conduction)
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
Thermal Resistance-Junction to Case(Drian)
TC=25
TC=70
TA=25
TA=70
TC=25
TC=70
Symbol
VDSS
VGSS
ID
IDM
IS
PD
TJ
TSTG
RθJA
RθJc
Typical
30
±12
4.5
4.5
4.4
3.5
15
1.6
7.8
5.0
150
-55/150
52
12.5
Unit
V
V
A
A
A
W
/W
Electrical Characteristics
(TA=25Unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
©Alfa-MOS Technology Corp.
Rev.A April 2018
Symbol
Conditions
V(BR)DSS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gFS
VSD
VGS=0V,ID=250uA
VDS=VGS,ID=250uA
VDS=0V,VGS=±12V
VDS=24V,VGS=0V
VDS=24V,VGS=0V
TJ=85
VDS5V,VGS=4.5V
VGS=10V ,ID=4.0A
VGS=4.5V,ID=3.0A
VGS=2.5V,ID=2.5A
VGS=1.8V,ID=1.0A
VDS=15V,ID=3.0A
IS=2.0A,VGS=0V
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDS=15V,VGS=4.5V
ID10A
VDS=15V,VGS=0V
f=1MHz
VDD=15V,RL=5Ω
ID3.0A,VGEN=4.5V
RG=1Ω
Min. Typ Max. Unit
30
0.6
1.0 V
±100 nA
1
uA
30
30 A
36 50
40
49
56
64
mΩ
61 76
15 S
0.8 1.2 V
3.6 5.5
0.5 nC
0.5
320
45 pF
20
5 10
30
30
60
60
ns
40 80
www.alfa-mos.com
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