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NTTFS5C670NL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power MOSFET - ON Semiconductor

भाग संख्या NTTFS5C670NL
समारोह Power MOSFET
मैन्युफैक्चरर्स ON Semiconductor 
लोगो ON Semiconductor लोगो 
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NTTFS5C670NL pdf
NTTFS5C670NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 5)
V(BR)DSS
V(BR)DSS/
TJ
IDSS
IGSS
VGS = 0 V, ID = 250 mA
60
VGS = 0 V,
VDS = 60 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = 20 V
V
27 mV/°C
10
mA
250
100 nA
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
VGS(TH)/TJ
RDS(on)
gFS
VGS = VDS, ID = 250 mA
VGS = 10 V
ID = 35 A
VGS = 4.5 V
ID = 35 A
VDS = 15 V, ID = 35 A
1.2 2.0 V
−4.7 mV/°C
5.4 6.5
mW
7.3 9.1
82 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Plateau Voltage
SWITCHING CHARACTERISTICS (Note 6)
CISS
COSS
CRSS
QG(TOT)
QG(TOT)
QG(TH)
QGS
QGD
VGP
VGS = 0 V, f = 1 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 30 V; ID = 35 A
VGS = 10 V, VDS = 30 V; ID = 35 A
VGS = 4.5 V, VDS = 30 V; ID = 35 A
1400
690
15
9.0
20
2.5
4.5
2.0
3.1
pF
nC
nC
nC
V
Turn−On Delay Time
td(ON)
Rise Time
tr
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
VGS = 4.5 V, VDS = 30 V,
ID = 35 A, RG = 2.5 W
11
60
ns
15
4
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = 35 A
TJ = 125°C
0.9 1.2
0.8
V
Reverse Recovery Time
tRR
34
Charge Time
Discharge Time
ta VGS = 0 V, dIS/dt = 100 A/ms,
tb IS = 35 A
17 ns
17
Reverse Recovery Charge
QRR
19 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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