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SCT3040KL डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-channel SiC power MOSFET - ROHM

भाग संख्या SCT3040KL
समारोह N-channel SiC power MOSFET
मैन्युफैक्चरर्स ROHM 
लोगो ROHM लोगो 
पूर्व दर्शन
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<?=SCT3040KL?> डेटा पत्रक पीडीएफ

SCT3040KL pdf
SCT3040KL
lThermal resistance
Parameter
Thermal resistance, junction - case
Datasheet
Symbol
RthJC
Values
Min. Typ. Max.
- 0.44 0.57
Unit
°C/W
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
1200
-
-
Zero gate voltage
drain current
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
Static drain - source
on - state resistance
Gate input resistance
VDS = 1200V, VGS = 0V
IDSS Tj = 25°C
Tj = 150°C
IGSS+ VGS = +22V, VDS = 0V
IGSS- VGS = -4V, VDS = 0V
VGS (th) VDS = 10V, ID = 10mA
VGS = 18V, ID = 20A
RDS(on) *5 Tj = 25°C
Tj = 125°C
RG f = 1MHz, open drain
-
-
-
-
2.7
-
-
-
1 10
2-
- 100
- -100
- 5.6
40 52
60 -
7-
Unit
V
mA
nA
nA
V
mW
W
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© 2018 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
2/12
TSQ50211-SCT3040KL
14.Jun.2018 - Rev.005

विन्यास 14 पेज
डाउनलोड[ SCT3040KL Datasheet.PDF ]


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अनुशंसा डेटापत्रक

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SCT3040KLN-channel SiC power MOSFETROHM
ROHM


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