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FQD2N60C डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel MOSFET - HAOHAI

भाग संख्या FQD2N60C
समारोह N-Channel MOSFET
मैन्युफैक्चरर्स HAOHAI 
लोगो HAOHAI लोगो 
पूर्व दर्शन
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<?=FQD2N60C?> डेटा पत्रक पीडीएफ

FQD2N60C pdf
2A, 600V, N沟道 场效应晶体管 产品参数规格书
Electrical CharacteristicsTC=25unless otherwise specified
Symbol
Parameter
Test Conditions
Min.
On Characteristics
VGS
RDS(ON)
Gate Threshold Voltage
Static Drain-Source On-Resistance
VDS=VGS, ID=250μA
VGS=10V, ID=0.9A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temperature Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V, ID=250μA
ID=250μA, Referenced to 25
VDS=600V, VGS=0V
VDS=480V, TC=25
VGS=±30V, VDS=0V
2.5
--
600
--
--
--
--
Dynamic Characteristics
Ciss
Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS=25V
VGS=0V
f=1.0MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=300V
ID=2A
RG=25
Note 4,5
VDS=480V, ID=2.0A
VGS=10VNote 4,5
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage
IS=1.8A, VGS=0V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
  Notes:
  1. Repetitive Rating: Pulse width limited by maximum junction temperature
  2. L=53mH, I AS =2A, V DD =50V, R G =25, Starting T J =25
  3. I SD 1.8A, di/dt 200A/μS, V DD BV DSS , Starting T J =25
  4. Pulse Test: Pulse Width 300μS, Duty Cycle 2%
  5. Essentially Independent of Operating Temperature
IS=2.0A, VGS=0V
diF/dt=100μA/μsNote 4
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
2N60 Series
N-Channel MOSFET
Typ. Max. Units
-- 4.5 V
4.0 5.0
-- -- V
0.6 -- V/
-- 1
μA
-- 10
--
±100
nA
320 420
38 50 pF
6.5 8.5
20 50
20 50
nS
30 70
20 50
5.5 7.5
1.8 -- nC
3.5 --
--
--
--
206
0.76
1.8
A
7.2
1.4 V
-- nS
-- μC
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