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DCR1180F डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH POWER THYRISTOR - YZPST

भाग संख्या DCR1180F
समारोह HIGH POWER THYRISTOR
मैन्युफैक्चरर्स YZPST 
लोगो YZPST लोगो 
पूर्व दर्शन
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<?=DCR1180F?> डेटा पत्रक पीडीएफ

DCR1180F pdf
Technical Data : CD-031
Page 2 of 4
ELECTRICAL CHARACTERISTICS AND RATINGS (cont’d) DCR1180F- Power Thyristor
Gating
Parameter
Peak gate power dissipation
Average gate power dissipation
Symbol
PGM
PG(AV)
Min.
Max. Typ.
200
5
Units
W
W
Conditions
tp = 40 us
Peak gate current
Gate current required to trigger all
units
IGM
IGT
Gate voltage required to trigger all VGT
units
10 A
300 mA VD = 6 V;RL = 3 ohms;Tj = +25 oC
j
VD = 6 V;RL = 3 ohms;Tj = 25oC
3V
Peak negative voltage
VGRM
5V
Dynamic
Parameter
Delay time
Turn-off time (with VR = -50 V)
Reverse recovery charge
Symbol Min.
td
tq
Qrr
Max. Typ. Units Conditions
0.7 µs
ITM = 50 A; VD = Rated VDRM
1.5 Gate pulse: VG = 20 V; RG = 20 ohms;
tr = 0.1 µs; tp = 20 µs
150 µs
250
ITM = 1000 A; di/dt = 25 A/µs;
VR -50 V; Re-applied dV/dt = 20
V/µs linear to 80% VDRM; VG = 0;
Tj = 125 oC; Duty cycle 0.01%
µC ITM = 1000 A; di/dt = 25 A/µs;
* VR -50 V
* For guaranteed max. value, contact factory.
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Operating temperature
Storage temperature
Thermal resistance - junction to
case
Thermal resistamce - case to sink
Mounting force
Weight
Symbol
Tj
Tstg
Min.
-40
-40
Max.
+125
+150
Typ.
Units
oC
oC
Conditions
RΘ (j-c)
RΘ (c-s)
0.025
0.010
oC/W Double sided cooled
oC/W Double sided cooled *
P 5500 6000
lb.
24.5 26.7
kN
W 16 oz.
460 g
* Mounting surfaces smooth, flat and greased

विन्यास 3 पेज
डाउनलोड[ DCR1180F Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
DCR1180FHIGH POWER THYRISTORYZPST
YZPST


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