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KP636 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH POWER THYRISTOR - YZPST

भाग संख्या KP636
समारोह HIGH POWER THYRISTOR
मैन्युफैक्चरर्स YZPST 
लोगो YZPST लोगो 
पूर्व दर्शन
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<?=KP636?> डेटा पत्रक पीडीएफ

KP636 pdf
PST KP636
HIGH POWER PHASE CONTROL THYRISTOR
Triggering
Parameter
Gate current
Gate voltage
Peak gate current
Peak reverse gate voltage
Peak gate power dissipation
Average gate power dissipation
Symbol Min
IGT
VGT
IGM
VRGM
PGM
PG(AV)
0.3
Max
350
250
125
5
3
20
20
200
5
Typ
Unit Conditions
mA VD = 6 V, RL = 3 Ω, Tj = - 40 °C
mA VD = 6 V, RL = 3 Ω, Tj = 25 °C
mA VD = 6 V, RL = 3 Ω, Tj = 125 °C
V VD = 6 V, RL = 3 Ω, Tj = - 40 °C
V VD = 6 V, RL = 3 Ω, Tj = 0 ÷ 125 °C
V VD = VDRM, RL = 1 kΩ, Tj = 125 °C
A
V
W
W
Switching
Parameter
Symbol Min Max Typ Unit Conditions
Critical rate of rise of on-state current di/dt 200 A/µs IG = 5·IGT, tr = 1µs, VDRM 1000V, Tj = Tjmax
Critical rate of rise of on-state voltage
Gate controlled delay time
dv/dt
td
Turn-off time
tq
Reverse recovery charge
Reverse recovery current
Thermal and mechanical
Parameter
Qrr
Irr
Symbol Min
500
3
250
Max
Typ
V/µs Linear ramp up to 80% of VDRM
µs
ITM = 50 A, VD = 67% VDRM,VG = 20 V
RG = 20 Ω, tr = 0.1 µs, tp = 20 µs
ITM = 1450 A; di/dt = 10 A/µs;VR 100 V
µs dV/dt = 20 V/µs linear to 67% VDRM
VG = 0 V; Tj = Tjmax
µC
A/µs
IT = 500 A
di/dt = 20 A/µs
VR 50 V
Tj = Tjmax
Unit Conditions
Operating temperature
Storage temperature
Thermal resistance
junction to case
Thermal resistance
case to sink
Mounting force
Tj -40 125
Tstg -40 150
Rth(j-c)
0.015
Rth(c-s)
0.006
F 22 26
°C
°C
°C/W Double side cooled, 180° SIN
°C/W
Double side cooled, mounting
surfaces smooth, flat and greased
kN
Weight
W 510 g
Ed. 1503
pag 2 / 3

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डाउनलोड[ KP636 Datasheet.PDF ]


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