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KP738 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH POWER THYRISTOR - YZPST

भाग संख्या KP738
समारोह HIGH POWER THYRISTOR
मैन्युफैक्चरर्स YZPST 
लोगो YZPST लोगो 
पूर्व दर्शन
1 Page
		
<?=KP738?> डेटा पत्रक पीडीएफ

KP738 pdf
PST KP738
HIGH POWER PHASE CONTROL THYRISTOR
Triggering
Parameter
Gate current
Gate voltage
Peak gate current
Peak reverse gate voltage
Peak gate power dissipation
Average gate power dissipation
Symbol Min
IGT
VGT
IGM
VRGM
PGM
PG(AV)
0.3
Max
300
200
125
5
3
10
5
200
5
Typ
Unit Conditions
mA VD = 6 V; RL = 3 ; Tj = - 40 °C
mA VD = 6 V; RL = 3 ; Tj = 25 °C
mA VD = 6 V; RL = 3 ; Tj = 25 °C
V VD = 6 V; RL = 3 ; Tj = - 40 °C
V VD = 6 V; RL = 3 ; Tj = 0 ÷ 125 °C
V VD = VDRM; RL = 10 k; Tj = 125 °C
A
V
W
W
Switching
Parameter
Symbol Min
Critical rate of rise of on-state current di/dt 200
Critical rate of rise of on-state voltage dv/dt 500
Gate controlled delay time
td
Turn-off time
tq
Reverse recovery charge
Reverse recovery current
Qrr
Irr
Max
3
400
Typ
2.5
250
2000
250
Unit Conditions
A/µs Switching from VDRM 1000 V
V/µs Linear ramp up to 80% of VDRM
µs
ITM = 50 A; VD = 1500 V; VG = 20 V
RG = 20 ; tr = 0.1 µs; tp = 20 µs
ITM = 500 A; di/dt = 25 A/µs;VR 50 V dV/dt
µs = 200 V/µs linear to 80% VDRM VG = 0 V;Tj =
125 °C
µC
A/µs
IT = 2000 A
di/dt = 20 A/µs
VR 50 V
Tj = Tjmax
Thermal and mechanical
Parameter
Operating temperature
Storage temperature
Thermal resistance
junction to case
Thermal resistance
case to sink
Mounting force
Weight
Ed. 14/06
Symbol Min Max Typ Unit Conditions
Tj -40 125
Tstg -40 125
Rth(j-c)
0.008
Rth(c-s)
0.002
F 40 50
°C
°C
°C/W
°C/W
kN
Double side cooled , DC
Double side cooled, mounting
surfaces smooth, flat and greased
W
1600
g
pag 2 / 3

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डाउनलोड[ KP738 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
KP738HIGH POWER THYRISTORYZPST
YZPST
KP738LTHIGH POWER THYRISTORYZPST
YZPST


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