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KP4301 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH POWER THYRISTOR - YZPST

भाग संख्या KP4301
समारोह HIGH POWER THYRISTOR
मैन्युफैक्चरर्स YZPST 
लोगो YZPST लोगो 
पूर्व दर्शन
1 Page
		
<?=KP4301?> डेटा पत्रक पीडीएफ

KP4301 pdf
PST KP4301
HIGH POWER PHASE CONTROL THYRISTOR
Triggering
Parameter
Gate current
Gate voltage
Peak gate current
Peak reverse gate voltage
Peak gate power dissipation
Average gate power dissipation
Symbol Min
IGT
VGT
IGM
VRGM
PGM
PG(AV)
0.3
Max
300
200
125
5
4
15
15
200
5
Typ
Unit Conditions
mA VD = 6 V; RL = 3 ; Tj = - 40 °C
mA VD = 6 V; RL = 3 ; Tj = 25 °C
mA VD = 6 V; RL = 3 ; Tj = 125 °C
V VD = 6 V; RL = 3 ; Tj = - 40 °C
V VD = 6 V; RL = 3 ; Tj = 0 ÷ 125 °C
V VD = VDRM; RL = 10 k; Tj = 125 °C
A
V
W
W
Switching
Parameter
Symbol Min
Critical rate of rise of on-state current di/dt
Critical rate of rise of on-state voltage dv/dt
Gate controlled delay time
td
Turn-off time
tq
Reverse recovery charge
Reverse recovery current
Qrr
Irr
Max
300
1000
Typ
250
Unit Conditions
A/µs IG = 5·IGT, tr = 1µs, Tj = Tjmax
V/µs Linear ramp up to 80% of VDRM
µs
ITM = 50 A; VD = 1500 V; VG = 20 V
RG = 20 ; tr = 0.1 µs; tp = 20 µs
ITM = 4300 A; di/dt = 10 A/µs;VR 100 V
µs dV/dt = 20 V/µs linear to 67% VDRM
VG = 0 V; Tj = Tjmax
µC
A/µs
IT = 500 A
di/dt = 20 A/µs
VR 50 V
Tj = Tjmax
Thermal and mechanical
Parameter
Operating temperature
Storage temperature
Thermal resistance
junction to case
Thermal resistance
case to sink
Mounting force
Weight
Ed. 13/12
Symbol Min Max Typ Unit Conditions
Tj
Tstg
Rth(j-c)
Rth(c-s)
F
-40 125
-40 150
0.0055
0.0015
60 90
°C
°C
°C/W
°C/W
kN
Double side cooled , 180°SIN
Double side cooled, mounting
surfaces smooth, flat and greased
W
2800
g
pag 2 / 3

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डाउनलोड[ KP4301 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
KP4301HIGH POWER THYRISTORYZPST
YZPST


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