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R3708FD45 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH POWER THYRISTOR - YZPST

भाग संख्या R3708FD45
समारोह HIGH POWER THYRISTOR
मैन्युफैक्चरर्स YZPST 
लोगो YZPST लोगो 
पूर्व दर्शन
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R3708FD45 pdf
ELECTRICAL CHARACTERISTICS AND RATINGS
Page 2 of 3
R3708FC45 - Power Thyristor
Gating
Parameter
Peak gate power dissipation
Average gate power dissipation
Symbol Min.
PGM
PG(AV)
Max. Typ.
200
5
Units
W
W
Conditions
tp = 40 us
Peak gate current
Gate current required to trigger all
units
IGM
IGT
Gate voltage required to trigger all VGT
units
15
300
30 200
125
5
3
0.30
Peak negative voltage
VGRM
15
A
mA VD = 12V;RL = 6 ohms;Tj = -40 oC
mA VD = 12V;RL = 6 ohms;Tj = +25 oC
mA VD = 12V;RL = 6 ohms;Tj = +125oC
V VD = 12 V;RL = 6 ohms;Tj = -40 oC
V VD = 12V;RL = 6 ohms;Tj = 0-125oC
V VD = Rated VDRM; RL = 1000 ohms;
Tj = + 125 oC
V
Dynamic
Parameter
Delay time
Turn-off time (with VR = -50 V)
Reverse recovery current
Symbol Min. Max.
td
tq
Irr
Typ. Units
2.5 s
250 s
A
Conditions
ITM = 50 A; VD = 1500 V
Gate pulse: VG = 20 V; RG = 20 ohms;
tr = 0.1 s; tp = 20 s
ITM =4000 A; di/dt = 60 A/s;
VR =100 V; Re-applied dV/dt = 20
V/s linear to 67% VDRM; VG = 0;
Tj = 125 oC; Tp=2000us
ITM =4000 A; di/dt = 60 A/s;
VR =100 V
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Operating temperature
Storage temperature
Thermal resistance - junction to
sink
Mounting force
Weight
Symbol Min. Max. Typ.
Tj -40 +125
Tstg -40 +140
Units
oC
oC
Conditions
R(j-s)
P
W
0.0075
0.0150
98 113
oC/W
kN
2.7 Kg.
Double sided cooled
Single sided cooled
* Mounting surfaces smooth, flat and greased
Note : for case outline and dimensions, see case outline drawing in page 4 of this Technical Data
Technical Data :
Page 3 of 3

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डाउनलोड[ R3708FD45 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
R3708FD45HIGH POWER THYRISTORYZPST
YZPST


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