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KP636S18 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH POWER THYRISTOR - YZPST

भाग संख्या KP636S18
समारोह HIGH POWER THYRISTOR
मैन्युफैक्चरर्स YZPST 
लोगो YZPST लोगो 
पूर्व दर्शन
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<?=KP636S18?> डेटा पत्रक पीडीएफ

KP636S18 pdf
YANGZHOU POSITIONING TECH. CO., LTD
Gating
Parameter
Peak gate power dissipation
Symbol
PGM
Average gate power dissipation
Peak gate current
Gate current required to trigger
all units
Gate voltage required to trigger
all units
PG(AV)
IGM
IGT
VGT
Min. Max. Typ. Units Conditions
150 W
2W
-A
300 mA VD = 10 V;IT=3A;Tj = +25 oC
3.5 V VD = 10 V;IT=3A;Tj = +25 oC
Peak negative voltage
VRGM
5V
Dynamic
Parameter
Delay time
Turn-on time
Turn-off time (with VR = -5 V)
Reverse recovery current
Symbol
tgd
tgt
tq
Irm
Min. Max. Typ. Units Conditions
-
3 s
VD=67% VDRM, IT=2000A,
di/dt=60A/us, IFG=2A, tr=0.5us,
--
Tj=25C
ITM=1000A, tp=1000us,
- - 250 s di/dt=60A/us, Vr=50V,
Vdr=80%VDRM, dVdr/dt=20V/us
--
-
A
ITM=4000A, tp=2000us,
di/dt=60A/us
THERMAL AND MECHANICAL CHARACTERISTICS AND RATINGS
Parameter
Operating temperature
Symbol Min. Max. Typ.
Tj -30 +125
Units
oC
Conditions
Storage temperature
Tstg -30 +125
oC
Thermal resistance - junction to
case
Thermal resistamce - case to
sink
Thermal resistance - junction to
sink
Mounting force
R(j-c)
R(c-s)
R(j-s)
F
22
Weight
W
* Mounting surfaces smooth, flat and greased
-
-
6
-
21
-
24.5
oC/kW
Double sided cooled
Single sided cooled
oC/kW
Double sided cooled *
Single sided cooled *
oC/kW
Double sided cooled
Single sided cooled
- kN
- Kg
about
Note : for case outline and dimensions, see case outline drawing in page 3 of this Technical Data
Tel: +86-514-87782298, 87782296 FAX:+86-514-87782297, 87367519
E-mail :positioning@china.com; yzforever@vip.tom.com; yzpst@pst888.com
WEB SITEhttp://www.pst888.com www.yzpst.cc

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डाउनलोड[ KP636S18 Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
KP636S18HIGH POWER THYRISTORYZPST
YZPST


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