DataSheet.in

CH5320 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Power Transistors - RCA

भाग संख्या CH5320
समारोह Power Transistors
मैन्युफैक्चरर्स RCA 
लोगो RCA लोगो 
पूर्व दर्शन
1 Page
		
<?=CH5320?> डेटा पत्रक पीडीएफ

CH5320 pdf
File No. 632 _ _ _ _ _ _ _ _ _~--------------------Chips
2N2102 Family (n-p-n)
CH2102 CH2405
CH2270 CH3053
RCA·CH2102, CH2270, CH2405, and CH3053 are double·diffused n·p·n epitaxial
planar transistor chips similar to RCA·2N21 02, 2N2270, 2N2405, and 2N3053
transistors, respectively. They can be used either singly or in complementary·
pair configLJrations with RCA p·n·p chips CH4036 and CH4037 for large·signal
medium.poWer applications.
® 4 Base Bonding Areas 0.008 in.
(0.20 mm) diameter
® Emitter Bonding Area 0.008 in,'
(0.20 mm) diameter
ELECTRICAL CHARACTERISTICS, at Chip Temperature = 250 C
Test Conditions
Characteristic
Symbol
Voltage
Vdc
Current
mAde CH2102
Limits
CH2270
CH2405
CH3053 Units
VCB VCE IC IE Min. Max. Min. Max. Min. Max. Min. Max.
Collector Cutoff
Current
ICBO
60
10 10 10 10
Emitter·to·Base
Breakdown
Voltage
V(BR)EBO
0.01 5 5 5 5
Collector·to·
Emitter Sustaining
Voltage:
Baseopena
VCEO(sus)
20 60
45 90
30
DC Forward·
Current Transfer
Ratiob
hFE
10 150
50
50
50 50
p.A
V
V
aCAUTION: This voltage MUST NOT be measured on a curve tracer. b pu1se tested; 2% duty factor, less than or equal to 300 Ils du·ration.
1~CI.0 .00 462 mIN.m)~.1
2N3439 Family (n-p-n)
CH3439
CH3440
RCA·CH3439 and CH3440 are passivated mesa n·p-n transistor chips similar tothose
used in RCA·2N3439 and 2N3440 high·voltage transistors. Because of their high·
breakdown voltages, good high·frequency response, and fast switching speeds,
these transistor chips can be used in high·yoltage differential and operational
amplifiers, high·yoltage inverters and high·yoltage, low·current switching regulators.
® Base Bonding Area 0.005 in.
{O.13 mml diameter
® Emitter Bonding Area 0.005 in.
(0.13 mml diameter
ELECTRICAL CHARACTERISTICS, at Chip Temperature = 250 C
Test Conditions
Characteristic
Symbol
Voltage
Vdc
Current
mAde
VCB VCE IC IE
Collector Cutoff Current
Emitter·to·Base Breakdown
Voltage
ICBO
V(BR)EBO
200
0.02
Collector·to· Emitter
Sustaining Voltage:
Base open" a
VCEO(sus)
20
DC Forward·Current
Transfer Ratio b
hFE
10 20
Limits
CH3439
CH3440
Units
Min. Max. Min. Max.
20 50 IlA
55
V
325 250
V
30 30
699

विन्यास 5 पेज
डाउनलोड[ CH5320 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
CH5320Power TransistorsRCA
RCA
CH5321Power TransistorsRCA
RCA


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English