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UT54ACTS08 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Quadruple 2-Input AND Gates - Cobham

भाग संख्या UT54ACTS08
समारोह Quadruple 2-Input AND Gates
मैन्युफैक्चरर्स Cobham 
लोगो Cobham लोगो 
पूर्व दर्शन
1 Page
		
<?=UT54ACTS08?> डेटा पत्रक पीडीएफ

UT54ACTS08 pdf
OPERATIONAL ENVIRONMENT1
PARAMETER
Total Dose
SEU Threshold2
SEL Threshold
Neutron Fluence
LIMIT
500K
80
120
1.0E14
UNITS
rads(Si)
MeV-cm2/mg
MeV-cm2/mg
n/cm2
Notes:
1. Logic will not latchup during radiation exposure within the limits defined in the table.
2. Device storage elements are immune to SEU affects.
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
LIMIT
UNITS
VDD
VI/O
TSTG
TJ
TLS
ΘJC
Supply voltage
Voltage any pin
Storage Temperature range
Maximum junction temperature
Lead temperature (soldering 5 seconds)
Thermal resistance junction to case
-0.3 to 7.0
-.3 to VDD +.3
-65 to +150
+175
+300
15.5 (ACS)
15.0 (ACTS)
V
V
°C
°C
°C
°C/W
II DC input current
PD Maximum power dissipation
±10 mA
1W
Note:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, functional operation of the device at these
or any other conditions beyond limits indicated in the operational sections is not recommended. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
RECOMMENDED OPERATING CONDITIONS
SYMBOL
VDD
VIN
TC
PARAMETER
Supply voltage
Input voltage any pin
Temperature range
LIMIT
4.5 to 5.5
0 to VDD
-55 to + 125
UNITS
V
V
°C
2 Cobham Semiconductor Solutions
www.cobham.com/HiRel

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डाउनलोड[ UT54ACTS08 Datasheet.PDF ]


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