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2N5982 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - HIGH POWER PNP SILICON TRANSISTORS - ETC

भाग संख्या 2N5982
समारोह HIGH POWER PNP SILICON TRANSISTORS
मैन्युफैक्चरर्स ETC 
लोगो ETC लोगो 
पूर्व दर्शन
1 Page
		
<?=2N5982?> डेटा पत्रक पीडीएफ

2N5982 pdf
2N5980, 2N5981, 2N5982/MJE5980, MJE5981, MJE5982 (continued)
-ELECTRICAL CHARACTER ISTICS (TC = 250 C unl_ olllerwi. notedl
I Chanocteristic
SYmbol
OFF CHARACTERISTICS
Collec_-£mitter Sustaining Voltage (1)
(lC =200 mAde, IB = 01
Collecter Cutoff Current
(VCE - 20 Vde, IB = 01
(VCE =30 Vde,IB = 0)
(VCF ·40 Vdc,IR = 01
Collec_ Cuteff Current
=(VCE 60 Vde, VBE(offl = 1.5 Vdcl
(VCE = BO Vde, VBE(offl = 1.5 Vdel
(VCE = 100 \tic, VBE(offl = 1.5Vdel
(VCE = 40 Vdc, VBE(off) = 1.5 Vde,
TC = 1250 CI
=(VCE 60 Vde, VBE(offl = 1.5 Vde,
TC = 1250 CI
(VCE = BO Vde, VBE(offl = 1.5 Vde,
Tc = 1250 CI
Emitter Cutoff Current
(VBE = 5.0 Vde, IC = 01
ON CHARACTERISTICS (1)
DC Current Gain
(lC = 1.0 Ade, VCE = 2.0 Vdc)
(lc = 4.0 Ade, VCE = 2.0 Vde)
(lc = 8.0 Ade, VCE = 2.0 Vde)
Collector-Emitter Saturation Voltage
(lc = 4.0 Ade, IB = 400 mAde)
(lc = 8.0 Adc, IB = 1.2 Ade)
B....Emitter Saturation Voltage
(lc = 8.0 Adc, IS = 1.2 Adc)
B.se-Emitter On Voltage
(lC = 4.0 Ade, VCE = 2.0 Vdc)
DYNAMIC CHARACTERISTICS
2N59BO, MJE59BO
2N5981 , MJE5981
2N5982, MJE5982
2N59BO, MJE59BO
2N59Bl, MJE5981
2N59B2, MJE5982
2N5980, MJE59BO
2N5981 , MJE5981
2N5982, MJE 5982
2N5980, MJE5980
2N5981 , MJE5981
2N5982, MJE 5982
VCEO(....I
ICEO
ICEX
lEBO
hFE
VCE(satl
VSE(satl
VBE(on)
Current-Gain - Sandwidth Product (2)
(lC = 500 mAdc, VCE = 10 Vdc,ftest = 1.0 MHz I
Output Capacitance
(VCS = 10 Vde, IE = 0, f = 0.1 MHz)
Small-Signal Currant Gain
(lC = 1.0 Adc, VCE = 4.0 Vde, f = 1.0 kHz)
'T
Cob
hfe
·Indicatas JEDEC Registered Data for 2N5980 Series.
(1) Put.. Test: Pulse WidthS-3GO 1", Duty CyclaS2.0%.
(2) fT =Ihfele ftest
FIGURE 2 - SWITCHING TIME TEST CIRCUIT
Min MIIx Unit
Vde
40 -
60 -
BO -
mA
- 1.0
- 1.0
- 1.0
- 100 ,.Adc
- 100
- 100
- 1.0 mAde
- 1.0
- 1.0
mAde
- 1.0
40 -
20 120
7.0 -
-
Vdc
- 0.6
- 1.7
Vde
- 2.5
Vdc
- 1.4
2.0 -
MHz
pF
- 350
20 -
-
FIGURE 3 - TURN-ON TIME
VCC
-30V
RC
SCOPE
51
tr,tf~10ns
DUTY CYCLE '1.0%
+4.0 V
RB .nd RC VARIED TO OBTAIN OESIRED CURRENT LEVELS
01 MUST BE FAST RECOVERY TYPE, 19:
MBD53DD USED ABOVE IB=100 mA
MSD610D USED BELOW IB =IOOmA
10DD
--SOD
........
200
...... '-....
~100
;:
"' 0
r-
Ir
-20
10
0.1
VCC=30V
1IlICT '
0.2 0.3 0.5
TJ" 25°C
-- -ldIl'VBE(offl~5.0V
1.0 2.0 0.3 5.0 10
IC. COLLECTOR CURRENT (AMP)
2-383

विन्यास 4 पेज
डाउनलोड[ 2N5982 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
2N5980HIGH POWER PNP SILICON TRANSISTORSETC
ETC
2N5981HIGH POWER PNP SILICON TRANSISTORSETC
ETC


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