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2N6067 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - PNP SILICON ANNULAR TRANSISTOR - ETC

भाग संख्या 2N6067
समारोह PNP SILICON ANNULAR TRANSISTOR
मैन्युफैक्चरर्स ETC 
लोगो ETC लोगो 
पूर्व दर्शन
1 Page
		
<?=2N6067?> डेटा पत्रक पीडीएफ

2N6067 pdf
2N6067 (continued)
*ELECTRICAL CHARACTERISTICS (TA ' 25°C unless otherwISe noted)
Characteristic
OFF CHARACTERISTICS
<DCollector-Emitter Breakdown Voltage
(lC' 10 mAde, IB' a)
Collector-Base Breakdown Voltage
(IC' 100 "Ade, IE' 01
Emitter-Base Breakdown Voltage
(IE' 10 "Ade, IC' D)
Collector Cutoff Current
(VCB' 30 Vde, IE ' D)
Emitter Cutoff Current
IVEB ~ 3.0 Vde, IC' 01
ON CHARACTERISTICS
<DOC Current Gain
(lC' 10 mAde, VCE = 10 Vde)
(IC' 100 mAde, VCE ' 1 0 Vde)
(lC' 500 mAde, VCE ' 1.0 Vde)
CDCollector-Emitter Saturation Voltage
(IC' 100 mAde, IB' 10 mAde)
(lC" 500 mAde, IB' 50 mAde)
<DBase-Emitter Saturation Voltage
(lC' 100 mAde, IS' 10 mAde)
(lC' 500 mAde, IS' 50 mAde)
DYNAMIC CHARACTERISTICS
Current-Galn-Bandwldth Product (2)
(IC' 50 mAde, VCE' 10 Vde, I = 100 MHz)
Collector-Base Capacitance
(VCS' 10 Vde, IE' 0, 1'100 kHz)
Emitter-Base Capacitance
(VES ' 0.5 Vde, IC ' 0, I " 100 kHz)
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
1Vee' 40 Vde, IC' 500 mAde,
lSI' 50 mAde, VEB(off) , 4.0 Vde)
Turn-Off Time
Storage Time
Fall Time
(VCC' 40 Vde, Ie = 500 mAde,
lSI' IS2' 50 mAde)
Symbol
BVCEO
BVCBO
BVEBO
ICBO
lEBO
Min
40
50
5.0
-
-
Max
-
-
-
500
100
Unit
Vde
Vde
Vde
nAdc
nAdc
hFE
VCE(,at)
VSE(,at)
40
50
25
-
-
-
08
-
-
200
150
Vde
0.3
0.6
Vde
0.9
11
IT 150
MHz
Ceb
Ceb -
16 pF
80 pF
ton
td
tr -
toft -
t, -
tl -
40 ns
17 ns
28 ns
80 ns
70 ns
25 ns
Indicates JEDEC Registered Data.
(DPulse Test: Pulse Width'S 300 Ils, Duty Cycle ~ 2.0%.
@ fT is defined as the frequency at which Ihfel extrapolates to unity.
FIGURE 1 - SWITCHING TIMES TEST CIRCUIT
+4.0
-40 V
O~
Vin' 10 Vde
lin = 50 Ohms
Pulse Width = 1.0 "s
t,<2.0n'
l-~tF
50111
1.0 kl1
RB= 10011
*r,~.-----:-,- - SCOPE
I
CS' < 7.0 pF
__ ...JI
2-433

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डाउनलोड[ 2N6067 Datasheet.PDF ]


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