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BC848 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - Small Signal Transistors (NPN) - General Semiconductor

भाग संख्या BC848
समारोह Small Signal Transistors (NPN)
मैन्युफैक्चरर्स General Semiconductor 
लोगो General Semiconductor लोगो 
पूर्व दर्शन
1 Page
		
<?=BC848?> डेटा पत्रक पीडीएफ

BC848 pdf
BC846 THRU BC849
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
h-Parameters at VCE = 5 V, IC = 2 mA,
f = 1 kHz,
Small Signal Current Gain
Current Gain Group A
B
C
Input Impedance
Current Gain Group A
B
C
Output Admittance Current Gain Group A
B
C
Reverse Voltage Transfer Ratio
Current Gain Group A
B
C
DC Current Gain
at VCE = 5 V, IC = 10 µA
Current Gain Group A
B
C
at VCE = 5 V, IC = 2 mA
Current Gain Group A
B
C
Thermal Resistance Junction to Substrate
Backside
Thermal Resistance Junction to Ambient Air
Collector Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
Base Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
Base-Emitter Voltage
at VCE = 5 V, IC = 2 mA
at VCE = 5 V, IC = 10 mA
Collector-Emitter Cutoff Current
at VCE = 80 V
at VCE = 50 V
at VCE = 30 V
at VCE = 80 V, Tj = 125 °C
at VCE = 50 V, Tj = 125 °C
at VCE = 30 V, Tj = 125 °C
BC846
BC847
BC848, BC849
BC846
BC847
BC848, BC849
Gain-Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 100 MHz
1) Device on fiberglass substrate, see layout
Symbol
hfe
hfe
hfe
hie
hie
hie
hoe
hoe
hoe
hre
hre
hre
hFE
hFE
hFE
hFE
hFE
hFE
RthSB
RthJA
VCEsat
VCEsat
VBEsat
VBEsat
VBE
VBE
ICES
ICES
ICES
ICES
ICES
ICES
fT
Min.
1.6
3.2
6
110
200
420
580
Typ. Max.
220
330
600
2.7
4.5
8.7
18
30
60
1.5 · 10–4
2 · 10–4
3 · 10–4
4.5
8.5
15
30
60
110
90 –
150 –
270 –
180 220
290 450
520 800
– 3201)
– 4501)
90 250
200 600
700 –
900 –
660 700
– 720
0.2 15
0.2 15
0.2 15
–4
–4
–4
300 –
Unit
k
k
k
µS
µS
µS
K/W
K/W
mV
mV
mV
mV
mV
mV
nA
nA
nA
µA
µA
µA
MHz

विन्यास 6 पेज
डाउनलोड[ BC848 Datasheet.PDF ]


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