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2N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Power MOSFET - yecheng technology

भाग संख्या 2N60
समारोह N-Channel Power MOSFET
मैन्युफैक्चरर्स yecheng technology 
लोगो yecheng technology लोगो 
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<?=2N60?> डेटा पत्रक पीडीएफ

2N60 pdf
Shenzhen yecheng technology industry co.,ltd
2N60
N-Channel Power MOSFET
Electrical characteristics (Ta=25unless otherwise noted)
Parameter
Symbol
Drain-Source Breakdown Voltage
V(BR) DSS
Gate-Threshold Voltage (note1)
VGS(th)
Gate-Body Leakage Current (note1)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance (note1)
RDS(on)
Forward Transconductance (note1)
gFS
Input Capacitance (note 2)
Ciss
Output Capacitance (note 2)
Coss
Reverse Transfer Capacitance (note 2)
Crss
Turn-On Delay Time (note 2)
td(on)
Rise Time (note 2)
tr
Turn-Off Delay Time (note 2)
td(off)
Fall Time (note 2)
tf
Forward on Voltage(note1)
VSD
Notes:
1. Pulse Test : Pulse width300µs, duty cycle 2%.
2. These parameters have no way to verify.
Test Condition
VGS = 0V, ID =250µA
VDS =VGS, ID =250µA
VDS =0V, VGS =±20V
VDS =600V, VGS =0V
VGS =10V, ID =1A
VDS =50V, ID =1A
VDS =25V,VGS =0V,
f =1MHz
VDD=300V,ID=2A,
VGS=10V,RG=18
VGS =0V, IS=2A
Min Typ Max Unit
600
V
2.0 4.0
±100 nA
25 µA
4.4
1S
435
56 pF
9.2
12
21
ns
30
24
1.6 V
2

विन्यास 2 पेज
डाउनलोड[ 2N60 Datasheet.PDF ]


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