DataSheet.in

2N60 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 600V N-Channel Power MOSFET - JINAN JINGHENG

भाग संख्या 2N60
समारोह 600V N-Channel Power MOSFET
मैन्युफैक्चरर्स JINAN JINGHENG 
लोगो JINAN JINGHENG लोगो 
पूर्व दर्शन
1 Page
		
<?=2N60?> डेटा पत्रक पीडीएफ

2N60 pdf
2N60
600V N-Channel Power MOSFET
THERMAL DATA
PARAMETER
TO-220/ITO-220
Junction to Ambient
TO-262/TO-263
TO-251/TO-252
TO-220/TO-263/TO-262
Junction to Case
ITO-220
TO-251/TO-252
SYMBOL
θJA
θJC
RATING
62.5
110
2.35
5.5
2.9
UNIT
C /W
C /W
ELECTRICAL CHARACTERISTICS
(TC=25 C , unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Forward
Gate- Source Leakage Current
Reverse
SYMBOL TEST CONDITIONS
BVDSS
IDSS
IGSS
VGS=0V,ID=250μA
VDS=600V,VGS=0V
VG=30V,VDS=0V
VGS=-30V,VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
VGS(TH)
RDS(ON)
VDS=VGS,ID=250μA
VGS=10V,ID=1.0A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V,VGS=0V,f=1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
tD(ON)
tR
tD(OFF)
VDD=300V,ID=2A,
RG=25Ω(Note1,2)
Turn-Off Fall Time
tF
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG VDS=480V,ID=2.4A,
QGS VGS=10V(Note1,2)
QGD
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD VGS=0V,IS=2.0A
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Reverse Recovery Time
trr
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width ≤300μS,Duty cycle≤2%.
VGS=0V,IS=2A
dIF/dt=100A/μs(Note 1)
2. Essentially independent of operating temperature.
MIN TYP MAX UNIT
600 V
10 μA
100 nA
-100 nA
2.0 4.0 V
4 4.4 ΩΩ
300 pF
45 pF
2 pF
10 ns
25 ns
20 ns
25 ns
5.7 nC
1.8 nC
2 nC
1.4 V
2.0 A
8.0 A
357 ns
2 μC
JINAN JINGHENG ELECTRONICS CO., LTD.
7-2 HTTP://WWW.JINGHENG.CN

विन्यास 7 पेज
डाउनलोड[ 2N60 Datasheet.PDF ]


शेयर लिंक


अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
2N602A 600V N-channel Enhancement Mode Power MOSFETROUM
ROUM
2N60N-Channel MOSFETHAOHAI
HAOHAI


भाग संख्याविवरणविनिर्माण
30L120CTSchottky RectifierPFC Device
PFC Device
AT28C010-12DKSpace 1-MBit (128K x 8) Paged Parallel EEPROMATMEL
ATMEL
B20NM50FDN-CHANNEL POWER MOSFETSTMicroelectronics
STMicroelectronics
D8442SD844SavantIC
SavantIC
FAE391-A20AM/FM Automotive Electronic TunerMitsumi
Mitsumi


Index : 0  1  2  3  4  5  6  7  8  9  A  B  C  D  E  F  G  H  I  J  K  L  M  N  O  P  Q  R  S  T  U  V  W  X  Y  Z



www.DataSheet.in    |   2017   |  संपर्क   |   खोज     |   English