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BD435 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - COMPLEMENTARY SILICON POWER TRANSISTORS - STMicroelectronics

भाग संख्या BD435
समारोह COMPLEMENTARY SILICON POWER TRANSISTORS
मैन्युफैक्चरर्स STMicroelectronics 
लोगो STMicroelectronics लोगो 
पूर्व दर्शन
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<?=BD435?> डेटा पत्रक पीडीएफ

BD435 pdf
BD433 BD434 BD435 BD436 BD437 BD438
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
3.5 oC/W
100 oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
for BD433/434
for BD435/436
for BD437/438
VCB = 22 V
VCB = 32 V
VCB = 45 V
ICES Collector Cut-off
Current (VBE = 0)
for BD433/434
for BD435/436
for BD437/438
VCE = 22 V
VCE = 32 V
VCE = 45 V
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 100 mA
IC = 2 A
for BD433/434
for BD435/436
for BD437/438
IB = 0.2 A
for BD433/434
for BD435/436
for BD437/438
VBE
Base-Emitter Voltage IC = 10 mA
IC = 2 A
VCE = 5 V
VCE = 1 V
for BD433/434
for BD435/436
for BD437/438
hFEDC Current Gain
IC = 10 mA
IC = 500 mA
IC = 2 A
VCE = 5 V
for BD433/434
for BD435/436
for BD437/438
VCE = 1 V
VCE = 1 V
for BD433/434
for BD435/436
for BD437/438
hFE1/hFE2Matched Pair
IC = 500 mA VCE = 1 V
fT Transition frequency IC = 250 mA
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VCE = 1 V
Min. Typ.
22
32
45
0.2
0.2
0.2
0.58
40 130
40 130
30 130
85 140
50
50
40
3
Max.
100
100
100
100
100
100
1
0.5
0.5
0.6
1.1
1.1
1.2
1.4
Unit
µA
µA
µA
µA
µA
µA
mA
V
V
V
V
V
V
V
V
V
V
MHz
2/4

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डाउनलोड[ BD435 Datasheet.PDF ]


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