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CHA2069-QDG डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - 18-30GHz Low Noise Amplifier - United Monolithic Semiconductors

भाग संख्या CHA2069-QDG
समारोह 18-30GHz Low Noise Amplifier
मैन्युफैक्चरर्स United Monolithic Semiconductors 
लोगो United Monolithic Semiconductors लोगो 
पूर्व दर्शन
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<?=CHA2069-QDG?> डेटा पत्रक पीडीएफ

CHA2069-QDG pdf
CHA2069-QDG
18-30GHz Low Noise Amplifier
Electrical Characteristics (low current configuration)
Tamb = +25°C, Vd = +4.5V, pads: B, D, E = GND
Symbol
Parameter
Fop Operating frequency range
G Gain
G Gain flatness
NF
IS11I
IS22I
IP3
P1dB
Id
Noise figure
Input return loss
Ouput return loss
3rd order intercept point (Pout/tone=-5dBm)
18-26GHz
Output power at 1dB gain compression
Drain bias current
Min
18
16.5
Typ
19.5
±2
3
-5
-7
16.5 18.5
9.0 10.5
65
Max
30
±2.5
Unit
GHz
dB
dB
4.5 dB
-2 dB
-2.5 dB
dBm
dBm
mA
These values are representative of onboard measurements as defined on the drawing in paragraph
“Evaluation mother board:". Performances can be optimized thanks to external matching (refer to the
"Sub-band enhancement" paragraph).
Electrical Characteristics (high current configuration)
Tamb = +25°C, Vd = +4,5V, pads: B, C, F = GND
Symbol
Parameter
Fop Operating frequency range
G Gain
G Gain flatness
NF
IS11I
IS22I
IP3
P1dB
Id
Noise figure
Input return loss
Ouput return loss
3rd order intercept point (Pout/tone=-5dBm)
18-26GHz
Output power at 1dB gain compression
Drain bias current
Min Typ Max Unit
18 30 GHz
17 20
dB
±2 ±2.5 dB
3 4.5 dB
-5 -2 dB
-7 -2.5 dB
18 20
dBm
12 13.5
85
dBm
mA
Ref. : DSCHA2069QDG9322- 18 Nov 09
2/16
Specifications subject to change without notice
Route Départementale 128, BP46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0) 1 69 33 03 08 - Fax: +33 (0) 1 69 33 03 09

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डाउनलोड[ CHA2069-QDG Datasheet.PDF ]


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अनुशंसा डेटापत्रक

भाग संख्याविवरणविनिर्माण
CHA2069-QDG18-30GHz Low Noise AmplifierUnited Monolithic Semiconductors
United Monolithic Semiconductors


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