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CEP9926 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - CET

भाग संख्या CEP9926
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स CET 
लोगो CET लोगो 
पूर्व दर्शन
1 Page
		
<?=CEP9926?> डेटा पत्रक पीडीएफ

CEP9926 pdf
CEP9926/CEB9926
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 20V, VGS = 0V
VGS = 8V, VDS = 0V
VGS = -8V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forwand Transconductance
Dynamic Characteristics c
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 4.5V, ID = 6.0A
VGS = 2.5V, ID = 5.2A
VDS = 10V, ID = 6.0A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 8V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 10V, ID = 1A,
VGEN = 4.5V, RGEN = 6
Turn-On Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 10V, ID = 6A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 1.7A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Min
20
0.5
7
Typ
0.73
23
28
20
1660
480
119
29
65
60
50
23
4.5
8
0.72
Max Units
1
100
-100
V
µA
nA
nA
1V
30 m
40 m
S
pF
pF
pF
60 ns
140 ns
140 ns
60 ns
30 nC
nC
nC
20 A
1.2 V
4
4 - 187

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डाउनलोड[ CEP9926 Datasheet.PDF ]


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CEP9926N-Channel Enhancement Mode Field Effect TransistorCET
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