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CEP73A3 डेटा पत्रक PDF( Datasheet डाउनलोड )


डेटा पत्रक - N-Channel Enhancement Mode Field Effect Transistor - CET

भाग संख्या CEP73A3
समारोह N-Channel Enhancement Mode Field Effect Transistor
मैन्युफैक्चरर्स CET 
लोगो CET लोगो 
पूर्व दर्शन
1 Page
		
<?=CEP73A3?> डेटा पत्रक पीडीएफ

CEP73A3 pdf
CEP73A3/CEB73A3
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 25V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forwand Transconductance
Dynamic Characteristics c
VGS(th)
RDS(on)
gFS
VGS = VDS, ID = 250µA
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 40A
VDS = 10V, ID = 15A
1
3V
7.5 9 m
10 13 m
20 S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 15V, VGS = 0V,
f = 1.0 MHz
2923
506
202
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6
Turn-On Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 20A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
19 23
6.8 12
71 128
12.8 17.5
24 30
9.1
7.5
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 20A
65 A
1.5 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 0.5mH, IAS = 35A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
4
4 - 155

विन्यास 4 पेज
डाउनलोड[ CEP73A3 Datasheet.PDF ]


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